ntd6415n ON Semiconductor, ntd6415n Datasheet

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ntd6415n

Manufacturer Part Number
ntd6415n
Description
Power Mosfet 100 V, 20 A, Single N Channel, Dpak/ipak
Manufacturer
ON Semiconductor
Datasheet
NTD6415N
Product Preview
Power MOSFET
100 V, 20 A, Single N−Channel,
DPAK/IPAK
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2008
December, 2008 − Rev. P0
MAXIMUM RATINGS
THERMAL RESISTANCE RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Gate−to−Source Voltage − Nonrepetitive
(T
Continuous Drain
Current R
(Note 1)
Power Dissipation
R
Pulsed Drain Current
Operating and Storage Temperature Range
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
(V
L = 0.1 mH, R
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
Junction−to−Case (Drain) Steady State
(Note 1)
Low R
High Current Capability
Avalanche Energy Specified
These are Pb−Free Devices
CCFL Backlight
DC Motor Control
Class D Amplifier
Power Supplies Secondary Side Synchronous Rectification
qJC
(Cu Area 1.127 sq in [1 oz] including traces).
P
DD
< 10 ms)
= 50 V
(Note 1)
DS(on)
qJC
dc
, V
G
= 25 W, V
GS
Parameter
Parameter
J
= 10 V, I
= 25°C
Steady
Steady
(T
State
State
DS
J
L(pk)
= 25°C unless otherwise noted)
= 40 V
t
p
= 10 ms
= 20 A,
T
T
T
dc
C
C
C
)
= 100°C
= 25°C
= 25°C
Symbol
Symbol
T
V
R
R
J
V
V
E
I
P
, T
T
DSS
DM
I
I
qJC
qJA
GS
GS
AS
D
S
D
L
stg
−55 to
Value
+175
$20
$30
14.5
TBD
Max
100
260
1.8
20
83
42
20
68
1
°C/W
Unit
Unit
mJ
°C
°C
W
V
V
V
A
A
A
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Gate
6415N
Y
WW
G
V
(BR)DSS
100 V
1
1 2
CASE 369C
STYLE 2
4 Drain
DPAK
Drain
ORDERING INFORMATION
3
2
= Device Code
= Year
= Work Week
= Pb−Free Package
G
& PIN ASSIGNMENTS
MARKING DIAGRAM
http://onsemi.com
4
3
Source
69 mW @ 10 V
R
DS(on)
D
Publication Order Number:
Gate
MAX
S
1
CASE 369D
1
STYLE 2
4 Drain
2
Drain
IPAK
3
2
NTD6415N/D
(Note 1)
I
D
20 A
MAX
4
3
Source

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ntd6415n Summary of contents

Page 1

... DS(on DPAK IPAK CASE 369D STYLE 2 STYLE 2 MARKING DIAGRAM & PIN ASSIGNMENTS 4 Drain 4 Drain 3 2 Source 1 3 Drain Gate Source 2 Drain = Device Code = Year = Work Week = Pb−Free Package ORDERING INFORMATION Publication Order Number: NTD6415N/D ...

Page 2

... Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device NTD6415NT4G NTD6415N−1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/ 25°C unless otherwise noted) ...

Page 3

... 0.13 (0.005) M 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O SEATING −T− PLANE SOLDERING FOOTPRINT* 6 ...

Page 4

... J 0.018 0.023 0.46 0.58 K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTD6415N/D ...

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