ntd4813n ON Semiconductor, ntd4813n Datasheet

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ntd4813n

Manufacturer Part Number
ntd4813n
Description
Power Mosfet 30 V, 40 A, Single N-channel, Dpak/ipak
Manufacturer
ON Semiconductor
Datasheet

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NTD4813N
Power MOSFET
30 V, 40 A, Single N-Channel, DPAK/IPAK
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2007
August, 2007 - Rev. 4
MAXIMUM RATINGS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current R
(Note 1)
Power Dissipation
R
Continuous Drain
Current R
(Note 2)
Power Dissipation
R
Continuous Drain
Current R
(Note 1)
Power Dissipation
R
Pulsed Drain
Current
Current Limited by Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain-to-Source Avalanche
Energy (V
I
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
L
Low R
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb-Free Devices
CPU Power Delivery
DC-DC Converters
High Side Switching
qJA
qJA
qJC
= 12 A
(Note 1)
(Note 2)
(Note 1)
DS(on)
pk
qJA
qJA
qJC
DD
, L = 1.0 mH, R
= 24 V, V
to Minimize Conduction Losses
Parameter
GS
t
Steady
p
State
=10ms
(T
G
= 10 V,
J
= 25 W)
= 25°C unless otherwise stated)
T
T
T
T
T
T
T
T
T
T
T
A
A
A
A
A
A
C
C
C
A
A
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
= 25°C
= 25°C
= 25°C
= 25°C
= 85°C
= 25°C
I
Symbol
DmaxPkg
V
T
dV/dt
EAS
V
I
P
P
P
T
T
DSS
ID
DM
STG
I
I
I
GS
D
D
S
J
D
D
D
L
,
-55 to
Value
+175
1.94
1.27
35.3
±20
260
9.0
7.0
7.6
5.9
30
40
31
90
35
29
72
6
1
Unit
V/ns
mJ
°C
°C
W
W
W
V
V
A
A
A
A
A
A
Gate
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
1
CASE 369C
(Bent Lead)
1 2
V
STYLE 2
Drain
Drain 3
(BR)DSS
DPAK
30 V
4
2
3
Source
ORDERING INFORMATION
G
Y
WW
4813N = Device Code
G
MARKING DIAGRAMS
4
& PIN ASSIGNMENTS
N-CHANNEL MOSFET
http://onsemi.com
Gate
(Straight Lead)
24 mW @ 4.5 V
13 mW @ 10 V
CASE 369AC
R
1
= Year
= Work Week
= Pb-Free Package
DS(ON)
Drain
Drain
3 IPAK
1
4
D
2
2 3
Publication Order Number:
4
3
MAX
Source
S
Gate
(Straight Lead
CASE 369D
1
1
NTD4813N/D
Drain
DPAK)
Drain
2
I
IPAK
D
4
3
2
40 A
MAX
3
Source
4

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ntd4813n Summary of contents

Page 1

... CASE 369AC CASE 369D 3 IPAK IPAK (Straight Lead) (Straight Lead DPAK) MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain Gate Drain Source Source Gate Drain Source Y = Year WW = Work Week 4813N = Device Code G = Pb-Free Package ORDERING INFORMATION Publication Order Number: NTD4813N/D ...

Page 2

... Total Gate Charge SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. NTD4813N (T = 25°C unless otherwise specified) J Symbol Test Condition = 250 mA V ...

Page 3

... Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain Inductance, DPAK Drain Inductance, IPAK Gate Inductance Gate Resistance 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. NTD4813N = 25°C unless otherwise specified) J Symbol Test Condition t d(ON ...

Page 4

... Figure 3. On-Resistance vs. Gate-to-Source Voltage 1 1 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 - JUNCTION TEMPERATURE (°C) J Figure 5. On-Resistance Variation with Temperature NTD4813N 60 ≥ 25° 0.042 T = 25° ...

Page 5

... SINGLE PULSE T = 25°C C 100 10 R LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 1 0 DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe Operating Area NTD4813N TYPICAL PERFORMANCE CURVES 25°C J 13.5 12 10 4 Figure 8. Gate-To-Source and Drain-To-Source ...

Page 6

... Device NTD4813NT4G NTD4813N-1G NTD4813N-35G IPAK Trimmed Lead †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTD4813N TYPICAL PERFORMANCE CURVES 25°C 100°C 125°C 10 100 PULSE WIDTH (ms) Figure 13 ...

Page 7

... 0.13 (0.005) M 5.80 0.228 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTD4813N PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE O SEATING -T- PLANE SOLDERING FOOTPRINT* 6.20 3 ...

Page 8

... BSC 2.29 BSC G H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 --- 3.93 --- STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTD4813N/D ...

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