sir424dp Vishay, sir424dp Datasheet - Page 4

• Manufacturer Part Number: sir424dp
• Description: N-channel 20-v D-s Mosfet
• Manufacturer: Vishay

SiR424DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.4
- 0.7
- 1.0
0.001
- 0.1
0.01
0.5
0.2
100
0.1
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
T
V
J
SD
0
= 150 °C
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
T
J
= 25 °C
0.6
50
I
D
= 250 µA
75
0.8
0.01
T
100
0.1
100
J
10
1
= - 50 °C
0.1
I
1.0
D
Safe Operating Area, Junction-to-Ambient
Limited by R
* V
Single Pulse
= 5 mA
125
T
GS
A
= 25 °C
> minimum V
V
150
1.2
DS
- Drain-to-Source Voltage (V)
DS(on)
1
*
GS
BVDSS Limited
at which R
0.020
0.015
0.010
0.005
0.000
DS(on)
10
150
120
90
60
30
0
0
0 .
0
is specified
0
1
On-Resistance vs. Gate-to-Source Voltage
10 µs
100 µs
1 ms
10 ms
100 ms
1 s
10 s, DC
Single Pulse Power (Junction-to-Ambient)
1
2
V
0.01
100
GS
- Gate-to-Source Voltage (V)
3
4
Time (s)
0.1
5
S09-0854-Rev. A, 18-May-09
Document Number: 64830
6
T
T
J
J
7
= 125 °C
= 25 °C
1
I
D
8
= 20 A
9
10
1
0