irhys67234cm International Rectifier Corp., irhys67234cm Datasheet
irhys67234cm
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irhys67234cm Summary of contents
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... RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) Product Summary Part Number Radiation Level R IRHYS67234CM 100K Rads (Si) IRHYS63234CM 300K Rads (Si) International Rectifier’s R6 technology provides TM superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for ...
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... IRHYS67234CM Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain Current I GSS Gate-to-Source Leakage Forward I GSS Gate-to-Source Leakage Reverse ...
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... Resistance (Low Ohmic TO-257) V Diode Forward Voltage„ SD Part numbers IRHYS67234CM and IRHYS63234CM International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area ...
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... IRHYS67234CM 100 VGS TOP 15V 12V 10V 8.0V 7.0V 10 6.0V 5.5V BOTTOM 5.0V 1 5.0V 20µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 150° 25° 50V 20µs PULSE WIDTH 1 5 5.5 6 6 Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics ...
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... Fig 6. Typical Gate Charge Vs. 100 25° 150° Single Pulse 0.1 1 1.0 1.2 Fig 8. Maximum Safe Operating Area IRHYS67234CM 200V 12A 125V 50V FOR TEST CIRCUIT SEE FIGURE Total Gate Charge (nC) Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED (on) 100µ ...
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... IRHYS67234CM 100 Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.05 0.1 0.02 0.01 0.01 1E-005 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 Fig 10a. Switching Time Test Circuit V DS 90% 125 150 10 d(on) Fig 10b. Switching Time Waveforms ...
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... Starting Junction Temperature (°C) V (BR)DSS Fig 12c. Maximum Avalanche Energy Same Type as D.U.T. 12V V GS Fig 13b. Gate Charge Test Circuit IRHYS67234CM I D TOP 5.4A 7.6A BOTTOM 12A 50 75 100 125 150 Vs. Drain Current Current Regulator 50KΩ .2µF .3µ ...
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... IRHYS67234CM Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á 50V, starting 25°C, L= 1.1mH Peak 12A 12V Â ≤ 12A, di/dt ≤ 508A/µ ≤ 250V ≤ 150°C Case Outline and Dimensions — Low-Ohmic TO-257AA A 10 ...