si3805dv Vishay, si3805dv Datasheet

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si3805dv

Manufacturer Part Number
si3805dv
Description
P-channel 20-v D-s Mosfet With Schottky Diode
Manufacturer
Vishay
Datasheet
Document Number: 68912
S09-2110-Rev. B, 12-Oct-09
Ordering Information: Si3805DV-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (T
Pulsed Drain Current (MOSFET)
Continuous Source-Drain Diode Current
(MOSFET Diode Conduction)
Average Forward Current (Schottky)
Pulsed Forward Current (Schottky)
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (Schottky)
PRODUCT SUMMARY
SCHOTTKY PRODUCT SUMMARY
Operating Junction and Storage Temperature Range
V
V
DS
KA
- 20
20
(V)
(V)
3 mm
G
A
S
P-Channel 20-V (D-S) MOSFET with Schottky Diode
0.108 at V
0.175 at V
0.084 at V
Diode Forward Voltage
Si3805DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
R
Top View
1
2
3
TSOP-6
DS(on)
2. 8 5 mm
GS
GS
GS
0.5 at 1 A
J
V
= - 4.5 V
= - 2.5 V
= - 10 V
(Ω)
= 150 °C) (MOSFET)
f
6
5
4
(V)
K
N/C
D
I
D
- 3.3
- 2.9
- 2.3
(A)
a
A
Q
= 25 °C, unless otherwise noted
I
F
T
T
T
T
T
T
T
T
T
T
T
T
T
T
g
4 nC
C
C
A
A
C
A
C
C
A
A
C
C
A
A
(A)
2
(Typ.)
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Marking Code
a
II
XXX
Part # Code
Symbol
T
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• LITTLE FOOT
• Compliant to RoHS Directive 2002/95/EC
Lot Tracea b ility
and Date Code
J
V
V
V
I
I
P
, T
DM
I
I
I
FM
DS
GS
KA
D
S
F
D
Definition
HDD
- DC-DC Converter
stg
®
Plus Schottky Power MOSFET
- 55 to 150
- 3.0
- 2.4
- 0.9
1.1
0.7
1.1
0.7
Limit
± 12
- 3.3
- 2.7
- 1.2
- 20
- 15
1.4
0.9
1.4
0.9
20
G
2
5
b
b, c
b, c
b, c
b, c
b, c
b, c
b, c
P-Channel MOSFET
Vishay Siliconix
S
D
Si3805DV
www.vishay.com
Unit
°C
W
V
A
A
K
1

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si3805dv Summary of contents

Page 1

... N Ordering Information: Si3805DV-T1-E3 (Lead (Pb)-free) Si3805DV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (T = 150 °C) (MOSFET) J Pulsed Drain Current (MOSFET) ...

Page 2

... Si3805DV Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET) Maximum Junction-to-Foot (Drain) (MOSFET Maximum Junction-to-Ambient (Schottky) Maximum Junction-to-Foot (Drain) (Schottky) Notes: a. Based ° Surface Mounted on 1" x 1" FR4 board Maximum under Steady State conditions is 150 °C/W. ...

Page 3

... 125 ° ° ° 125 ° Si3805DV Vishay Siliconix Min. Typ. Max 0. ° Min. Typ. Max. 0.42 0.50 0.36 0.43 0.015 0.08 0.50 5.00 0.02 0.10 0.7 7.00 5 ...

Page 4

... Si3805DV Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS thru Drain-to-Source Voltage (V) DS Output Characteristics 0. 0.04 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage ...

Page 5

... BVDSS A Single Pulse Limited 0.01 0 Drain-to-Source Voltage ( > minimum V at which R is specified GS GS DS(on) Safe Operating Area, Junction-to-Case Si3805DV Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.1 1 ...

Page 6

... Si3805DV Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS Case Temperature (°C) C Current Derating* * The power dissipation P is based J(max) dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 7

... Document Number: 68912 S09-2110-Rev. B, 12-Oct- °C, unless otherwise noted Square Wave Pulse Duration ( Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si3805DV Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 130 ° ...

Page 8

... Si3805DV Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS Junction Temperature (°C) J Reverse Current vs. Junction Temperature 250 200 150 100 Drain-to-Source Voltage (V) DS Capacitance www.vishay.com ° ...

Page 9

... Document Number: 68912 S09-2110-Rev. B, 12-Oct- °C, unless otherwise noted Square Wave Pulse Duration ( Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si3805DV Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 132 ° ...

Page 10

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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