irlr3717 International Rectifier Corp., irlr3717 Datasheet - Page 7

• Manufacturer Part Number: irlr3717
• Description: Hexfet Power Mosfet
• Manufacturer: International Rectifier Corp.

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‚
+
R
-
Fig 16a. Gate Charge Test Circuit
G
12V
V
D.U.T
GS
Same Type as D.U.T.
Current Regulator
.2PF
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
ƒ
+
-
xdv/dt controlled by R
xDriver same type as D.U.T.
xI
xD.U.T. - Device Under Test
50K:
3mA
Current Sampling Resistors
SD
controlled by Duty Factor "D"
.3PF
Circuit Layout Considerations
x Low Stray Inductance
xGround Plane
xLow Leakage Inductance
I
G
Current Transformer
D.U.T.
-
„
G
I
HEXFET
D
+
+
-
V
V
DS
DD
®
+
Power MOSFETs
-
Re-Applied
Voltage
Reverse
Recovery
Current
Vgs(th)
Qgs1 Qgs2
Vds
*
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
GS
Fig 16b. Gate Charge Waveform
P.W.
SD
= 5V for Logic Level Devices
DS
Waveform
Waveform
Ripple d 5%
Body Diode
Period
Qgd
Body Diode Forward
Diode Recovery
Current
IRLR/U3717
dv/dt
Forward Drop
di/dt
Qgodr
D =
Period
P.W.
V
V
I
Vgs
SD
GS
DD
=10V
7
Id
*