si4621dy Vishay, si4621dy Datasheet

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si4621dy

Manufacturer Part Number
si4621dy
Description
P-channel 20-v D-s Mosfet With Schottky Diode
Manufacturer
Vishay
Datasheet

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Part Number:
si4621dy-T1-E3
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VISHAY
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Part Number:
si4621dy-T1-E3
Manufacturer:
VISHAY
Quantity:
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Part Number:
si4621dy-T1-E3
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Document Number: 73855
S-71205–Rev. B, 18-Jun-07
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (T
Pulsed Drain Current (MOSFET)
Continuous Source-Drain Diode Current
(MOSFET Diode Conduction)
Average Forward Current (Schottky)
Pulsed Forward Current (MOSFET)
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (Schottky)
Operating Junction and Storage Temperature Range
PRODUCT SUMMARY
SCHOTTKY PRODUCT SUMMARY
V
V
DS
KA
- 20
20
(V)
(V)
P-Channel 20-V (D-S) MOSFET with Schottky Diode
0.094 at V
0.054 at V
Diode Forward Voltage
r
Ordering Information: Si4621DY-T1-E3 (Lead (Pb)-free)
DS(on)
GS
0.45 at 1 A
GS
J
V
= - 4.5 V
(Ω)
= - 10 V
A
G
A
S
= 150 °C) (MOSFET)
f
(V)
1
2
3
4
Top View
SO-8
I
D
6.2
4.7
(A)
A
Q
I
= 25 °C, unless otherwise noted
F
T
T
T
T
T
T
T
T
T
T
T
T
T
T
8
7
6
5
4.5 nC
g
C
C
C
C
C
C
C
A
A
A
A
A
A
A
(A)
2
(Typ)
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
New Product
a
K
K
D
D
Symbol
T
FEATURES
APPLICATIONS
• LITTLE FOOT
• Portable Devices
J
V
V
V
I
I
P
, T
DM
I
I
FM
I
GS
DS
KA
D
S
F
D
- Ideal for Boost Circuits
- Ideal for Buck Circuits
stg
G
P-Channel MOSFET
S
D
®
Plus Schottky
- 55 to 150
1.7
1.3
1.6
1.0
Limit
- 5
- 4
± 20
- 6.2
- 2.6
2
- 20
- 5
- 25
3.1
2.7
1.7
20
2
b, c
5
2
b, c
b, c
b, c
b
b, c
b, c
b, c
a
Vishay Siliconix
Si4621DY
K
A
www.vishay.com
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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si4621dy Summary of contents

Page 1

... Ordering Information: Si4621DY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (T = 150 °C) (MOSFET) J Pulsed Drain Current (MOSFET) Continuous Source-Drain Diode Current (MOSFET Diode Conduction) ...

Page 2

... Si4621DY Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET) Maximum Junction-to-Foot (Drain) (MOSFET) Maximum Junction-to-Ambient (Schottky) Maximum Junction-to-Foot (Drain) (Schottky) Notes: b. Surface Mounted on 1" x 1" FR4 board sec. f. Maximum under Steady State conditions is 110 °C/W. ...

Page 3

... Test Conditions 125 ° ° 125 ° Si4621DY Vishay Siliconix Min Typ Max - 6 0 ° Min Typ Max 0.41 0.45 0.36 0.41 0.02 0.20 0 www ...

Page 4

... Si4621DY Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 0.5 1 1.5 V – Drain-to-Source Voltage (V) DS Output Characteristics 0. 0.20 0.15 0.10 0.05 0. – Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage 6 – Total Gate Charge (nC) ...

Page 5

... °C A BVDSS limited Single Pulse 0.01 0 – Drain-to-Source Voltage ( minimum V at which DS(on) Safe Operating Area, Junction-to-Case Si4621DY Vishay Siliconix 125 ° ° – Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage ...

Page 6

... Si4621DY Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS – Case Temperature (°C) C Current Derating* * The power dissipation P is based J(max) dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 7

... Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Si4621DY Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...

Page 8

... Si4621DY Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS T 100 0.1 0.01 0.001 0.0001 0.00001 - – Junction Temperature (°C) J Reverse Current vs. Junction Temperature www.vishay.com 8 New Product = 25 °C, unless otherwise noted 0.10 0.01 75 100 125 150 300 240 180 120 ...

Page 9

... Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Si4621DY Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...

Page 10

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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