si4166dy Vishay, si4166dy Datasheet

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si4166dy

Manufacturer Part Number
si4166dy
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
si4166dy-T1-E3
Manufacturer:
VISHAY
Quantity:
25 000
Part Number:
si4166dy-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
si4166dy-T1-E3
Quantity:
70 000
Part Number:
si4166dy-T1-GE3
Manufacturer:
VISHAY
Quantity:
150
Part Number:
si4166dy-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
si4166dy-T1-GE3
Quantity:
54
Company:
Part Number:
si4166dy-T1-GE3
Quantity:
70 000
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 80 °C/W.
Document Number: 68953
S-82661-Rev. A, 03-Nov-08
Ordering Information: Si4166DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
30
(V)
C
= 25 °C.
G
S
S
S
0.0055 at V
0.0039 at V
1
2
3
4
R
DS(on)
Top View
GS
GS
SO-8
J
(Ω)
= 150 °C)
= 4.5 V
= 10 V
b, d
N-Channel 30-V (D-S) MOSFET
8
7
6
5
I
D
30.5
25.6
D
D
D
D
(A)
Steady State
a
t ≤ 10 s
T
T
T
L = 0.1 mH
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
21.5 nC
g
(Typ.)
New Product
Symbol
R
R
thJA
thJF
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
GS
DS
AS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free
• TrenchFET
• 100 % R
- Notebook PC
- Gaming
Low-Side DC/DC Conversion
Typical
34
15
g
®
and UIS Tested
Power MOSFET
G
- 55 to 150
N-Channel MOSFET
20.5
16.5
2.7
3.0
1.9
Limit
± 20
30.5
24.5
5.9
6.5
4.2
30
70
30
45
b, c
b, c
b, c
b, c
b, c
D
S
Maximum
41
19
Vishay Siliconix
Si4166DY
www.vishay.com
°C/W
Unit
Unit
mJ
°C
RoHS
W
COMPLIANT
V
A
1

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si4166dy Summary of contents

Page 1

... Top View Ordering Information: Si4166DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy ...

Page 2

... Si4166DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... S-82661-Rev. A, 03-Nov-08 New Product 1.5 2.0 2.5 3500 2800 2100 1400 700 1.8 1 1.0 0.8 0 Si4166DY Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss ...

Page 4

... Si4166DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.2 0.0 - 0 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.020 0.016 0.012 °C J 0.008 0.004 0.000 ...

Page 5

... T - Ambient Temperature (°C) A Power, Junction-to-Ambient = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si4166DY Vishay Siliconix 100 125 T - Case Temperature (°C) C Power Derating, Junction-to-Foot 125 150 www.vishay.com 150 5 ...

Page 6

... Si4166DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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