si4160dy Vishay, si4160dy Datasheet - Page 4

• Manufacturer Part Number: si4160dy
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Si4160DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.2
- 0.4
- 0.6
- 0.8
0.01
100
0.4
0.2
0.0
0.1
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
T
SD
J
0
= 150 °C
- Source-to-Drain Voltage (V)
Threshold Voltage
T
0.4
J
25
- Temperature (°C)
0.6
50
I
D
75
= 250 µA
0.8
0.01
100
T
0.1
10
J
100
1
0.01
= 25 °C
Limited by R
I
1.0
D
Safe Operating Area, Junction-to-Ambient
* V
Single Pulse
= 5 mA
125
T
GS
A
= 25 °C
> minimum V
New Product
V
1.2
150
0.1
DS
DS(on)
- Drain-to-Source Voltage (V)
*
GS
at which R
1
BVDSS Limited
0.020
0.015
0.010
0.005
0.000
170
136
102
DS(on)
68
34
0
0
10
0
0 .
0
is specified
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1
1 ms
10 ms
100 ms
1 s
10 s
DC
2
V
0.01
GS
100
3
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
5
S-83092-Rev. A, 29-Dec-08
Document Number: 69069
6
7
1
T
T
I
J
D
J
8
= 125 °C
= 25 °C
= 15 A
9
10
1
0