si4134dy Vishay, si4134dy Datasheet

no-image

si4134dy

Manufacturer Part Number
si4134dy
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4134DY
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
si4134dy-T1-E3
Manufacturer:
VISHAY
Quantity:
25 000
Part Number:
si4134dy-T1-E3
Manufacturer:
VISHAY
Quantity:
310
Part Number:
si4134dy-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
si4134dy-T1-GE3
Manufacturer:
VISHAY
Quantity:
150
Part Number:
si4134dy-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
si4134dy-T1-GE3
0
Company:
Part Number:
si4134dy-T1-GE3
Quantity:
70 000
Part Number:
si4134dy-TI-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Document Number: 68999
S-82774-Rev. A, 17-Nov-08
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
Ordering Information: Si4134DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
V
DS
30
(V)
G
S
S
S
C
= 25 °C.
0.0175 at V
0.014 at V
1
2
3
4
R
DS(on)
Top View
SO-8
GS
GS
J
(Ω)
= 150 °C)
= 10 V
= 4.5 V
b, d
N-Channel 30-V (D-S) MOSFET
8
7
6
5
D
D
D
D
I
D
12.5
14
(A)
Steady State
a
t ≤ 10 s
T
T
T
L = 0.1 mH
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
7.3 nC
g
(Typ.)
New Product
Symbol
R
R
thJA
thJF
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
GS
DS
AS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• DC/DC Conversion
- Notebook System Power
Typical
38
20
g
and UIS Tested
®
Power MOSFET
G
- 55 to 150
N-Channel MOSFET
9.9
7.9
2.0
2.5
1.6
11.25
Limit
± 20
11.2
4.1
3.2
30
14
32
15
5
b, c
b, c
b, c
b, c
b, c
D
S
Maximum
50
25
Vishay Siliconix
Si4134DY
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

Related parts for si4134dy

si4134dy Summary of contents

Page 1

... Top View Ordering Information: Si4134DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy ...

Page 2

... Si4134DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... New Product 1.5 2.0 2.5 1100 880 660 440 220 1.8 1 1.0 0.8 0.6 9.6 12.8 16.0 Si4134DY Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss ...

Page 4

... Si4134DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.06 0.05 0. °C J 0.03 0.02 0.01 0.00 0.8 1.0 1 250 µA ...

Page 5

... T - Case Temperature (°C) C Current Derating* 2.0 1.6 1.2 0.8 0.4 0.0 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si4134DY Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www.vishay.com 150 5 ...

Page 6

... Si4134DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

Related keywords