si4346dy Vishay, si4346dy Datasheet

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si4346dy

Manufacturer Part Number
si4346dy
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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SI4346DY
Manufacturer:
TI
Quantity:
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Part Number:
si4346dy-T1-E3
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Part Number:
si4346dy-T1-E3
Quantity:
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Part Number:
si4346dy-T1-E3
Quantity:
7 500
Part Number:
si4346dy-T1-GE3
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VISHAY
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Part Number:
si4346dy-T1-GE3
Manufacturer:
VISHAY
Quantity:
300
Part Number:
si4346dy-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 72958
S-62446-Rev. D, 27-Nov-06
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
30
Ordering Information: Si4346DY-T1-E3 (Lead (Pb)-free)
(V)
G
S
S
S
0.025 at V
0.030 at V
0.036 at V
0.023 at V
1
2
3
4
r
DS(on)
Top View
GS
GS
GS
GS
SO-8
(Ω)
J
a
= 4.5 V
= 3.0 V
= 2.5 V
= 10 V
= 150 °C)
a
N-Channel 30-V (D-S) MOSFET
8
7
6
5
a
D
D
D
D
I
D
7.5
6.8
6.0
8
(A)
a
A
New Product
Q
= 25 °C, unless otherwise noted
Steady State
Steady State
g
T
T
T
T
6.5
t ≤ 10 sec
(Typ)
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• TrenchFET
• 100 % R
• High-Side DC/DC Conversion
• Notebook Logic DC/DC, Low-Side
G
Symbol
Symbol
T
R
R
- Notebook
- Desktop
- Server
J
V
V
N-Channel MOSFET
I
P
, T
DM
I
I
thJA
thJF
GS
DS
D
S
D
stg
D
S
g
Tested
®
Gen II Power MOSFET
Typical
10 sec
6.5
2.2
2.5
1.6
43
74
22
8
- 55 to 150
± 12
30
30
Steady State
Maximum
1.20
1.31
0.84
5.9
4.7
50
95
27
Vishay Siliconix
Si4346DY
www.vishay.com
°C/W
Unit
Unit
°C
RoHS
W
COMPLIANT
V
A
Pb-free
1

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si4346dy Summary of contents

Page 1

... Top View Ordering Information: Si4346DY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4346DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... V Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72958 S-62446-Rev. D, 27-Nov- °C J 0.9 1.2 1.5 Si4346DY Vishay Siliconix 1200 1000 C iss 800 600 400 C oss 200 C rss Drain-to-Source Voltage (V) DS Capacitance 1 ...

Page 4

... Si4346DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0.2 0.0 - 0.2 - 0.4 - 0 Temperature (° Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 250 µ 100 125 150 100 r Limited* DS(on D(on) Limited °C A 0.1 Single Pulse BV Limited DSS 0 ...

Page 5

... Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72958. Document Number: 72958 S-62446-Rev. D, 27-Nov- Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Si4346DY Vishay Siliconix 1 10 www.vishay.com 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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