si4396dy Vishay, si4396dy Datasheet - Page 4

• Manufacturer Part Number: si4396dy
• Description: N-channel 30-v D-s Mosfet With Schottky Diode
• Manufacturer: Vishay

Si4396DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless noted
www.vishay.com
4
0.000001
0.00001
0.0001
0.001
0.01
0.1
100
0.1
1
10
1
0
0.0
Source-Drain Diode Forward Voltage
25
T
0.2
Reverse Current (Schottky)
V
J
SD
= 150 °C
T
J
– Temperature (°C)
- Source-to-Drain Voltage (V)
50
0.4
30 V
75
0.01
100
T
0.6
0.1
10
J
1
= 25 °C
100
0.1
*V
GS
*Limited by r
Single Pulse
T = 25 °C
A
0.8
20 V
125
V
minimum V
DS
– Drain-to-Source Voltage (V)
Safe Operating Area
150
DS(on)
1
1
GS
at which r
DS(on)
10
is specified
160
200
120
0.10
0.08
0.06
0.04
0.02
0.00
80
40
0
0.001
0
On-Resistance vs. Gate-to-Source Voltage
I
10 ms
100 ms
1 ms
10 s
D
1 s
dc
= 10 A
T
100
A
= 25 °C
2
V
0.01
GS
Junction-to-Ambient
– Gate-to-Source Voltage (V)
Time (sec)
4
S-61223-Rev. A, 17-Jul-06
Document Number: 74252
0.1
6
T
A
= 125 °C
1
8
10
10