si4942dy Vishay, si4942dy Datasheet

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si4942dy

Manufacturer Part Number
si4942dy
Description
Dual N-channel 40-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Notes
a.
Document Number: 71887
S-03950—Rev. B, 16-May-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
Ordering Information: Si4942DY
i
DS
40
40
(V)
J
G
G
ti
S
S
1
1
2
2
t A bi
1
2
3
4
Si4942DY-T1 (with Tape and Reel)
J
J
a
a
0.028 @ V
0.021 @ V
Top View
= 150_C)
= 150_C)
t
a
a
SO-8
Parameter
Parameter
r
DS(on)
Dual N-Channel 40-V (D-S) MOSFET
a
a
GS
GS
(W)
= 4.5 V
= 10 V
8
7
6
5
a
D
D
D
D
1
1
2
2
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
L = 0.1 mH
T
T
T
T
t v 10 sec
A
A
A
A
I
= 25_C
= 70_C
= 25_C
= 70_C
D
7.4
6.4
(A)
Symbol
Symbol
G
T
R
R
R
V
J
1
V
I
I
P
P
DM
, T
I
I
AS
I
thJA
thJF
DS
GS
D
D
S
D
D
stg
N-Channel MOSFET
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Low Power Synchronous Rectifier
D Automotive 12-V Systems
D
S
1
1
10 secs
Typical
7.4
5.8
1.8
2.1
1.3
50
90
28
G
- 55 to 150
2
"20
40
30
25
N-Channel MOSFET
Steady State
Maximum
Vishay Siliconix
D
S
110
2
5.3
4.3
0.9
1.1
0.7
2
60
34
Si4942DY
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
1

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si4942dy Summary of contents

Page 1

... Top View Ordering Information: Si4942DY Si4942DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Avalanche Current Continuous Source Current (Diode Conduction) ...

Page 2

... Si4942DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...

Page 3

... J 1 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Document Number: 71887 S-03950—Rev. B, 16-May-03 1600 1280 0.10 0.08 0.06 0. 25_C J 0.02 0.00 0.8 1.0 1.2 Si4942DY Vishay Siliconix Capacitance C iss 960 640 C oss 320 C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 7 1.6 1.4 1.2 1.0 ...

Page 4

... Si4942DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0.4 0 250 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (_C) J Limited by r DS(on) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 100 125 150 Safe Operating Area 100 ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Document Number: 71887 S-03950—Rev. B, 16-May- Square Wave Pulse Duration (sec) Si4942DY Vishay Siliconix 1 10 www.vishay.com 5 ...

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