si4834cdy Vishay, si4834cdy Datasheet
si4834cdy
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si4834cdy Summary of contents
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... Top View Ordering Information: Si4834CDY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current ...
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... Si4834CDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...
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... Channel dI/dt = 100 A/µ ° Channel dI/dt = 100 A/µ ° Si4834CDY Vishay Siliconix a Typ. Min. Max. Unit Ch-1 ...
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... Si4834CDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 0.0 0.5 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.024 0.022 V = 4.5 V 0.020 GS 0.018 0.016 0.014 Drain Current (A) D On-Resistance vs. Drain Current ...
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... A Single Pulse BVDSS Limited 0.01 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient Si4834CDY Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage ...
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... Si4834CDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3.5 2.8 2.1 1.4 0.7 0 Case Temperature (°C) C Power Derating, Junction-to-Foot * The power dissipation P is based J(max) dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...
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... Document Number: 68790 S-81717-Rev. A, 04-Aug-08 New Product - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient -2 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4834CDY Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 110 ° ...
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... Si4834CDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 0.0 0.5 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.024 0.022 V = 4.5 V 0.020 GS 0.018 0.016 0.014 Drain Current (A) D On-Resistance vs. Drain Current ...
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... A Single Pulse BVDSS Limited 0.01 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient Si4834CDY Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage ...
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... Si4834CDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3.5 2.8 2.1 1.4 0.7 0 Case Temperature (°C) C Power Derating, Junction-to-Foot * The power dissipation P is based J(max) dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...
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... Document Number: 68790 S-81717-Rev. A, 04-Aug-08 New Product - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient -2 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4834CDY Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 110 ° ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...