si4431cdy Vishay, si4431cdy Datasheet

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si4431cdy

Manufacturer Part Number
si4431cdy
Description
P-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Part Number:
si4431cdy-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
si4431cdy-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
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Part Number:
si4431cdy-T1-E3
Quantity:
70 000
Part Number:
si4431cdy-T1-GE3
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VISHAYINTERTECHNOLO
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3 032
Part Number:
si4431cdy-T1-GE3
Manufacturer:
VISHAY
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310
Part Number:
si4431cdy-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
si4431cdy-T1-GE3
Quantity:
10 000
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 95 °C/W.
d. Based on T
Document Number: 68748
S-81546-Rev. A, 07-Jul-08
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot
PRODUCT SUMMARY
V
Ordering Information: Si4431CDY-T1-E3 (Lead (Pb)-free)
DS
- 30
(V)
G
S
S
S
C
= 25 °C.
0.049 at V
0.032 at V
1
2
3
4
R
DS(on)
Top View
SO-8
GS
GS
J
= - 4.5 V
(Ω)
= - 10 V
= 150 °C)
a, c
8
7
6
5
P-Channel 30-V (D-S) MOSFET
D
D
D
D
I
D
- 9.0
- 5.8
(A)
d
A
Q
= 25 °C, unless otherwise noted
g
13 nC
Steady State
(Typ.)
New Product
t ≤ 10 s
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• TrenchFET
• 100 % R
• Load Switch
• Battery Switch
Symbol
R
R
thJA
thJF
Symbol
T
J
V
V
I
P
, T
I
DM
I
DS
GS
D
S
D
g
stg
Tested
®
Power MOSFET
Typical
40
24
G
P-Channel MOSFET
- 55 to 150
- 7.0
- 5.6
- 2.1
2.5
1.6
S
D
Limit
± 20
- 9.0
- 7.2
- 3.5
Maximum
- 30
- 30
4.2
2.7
a, b
a, b
a, b
a, b
a, b
Vishay Siliconix
50
30
Si4431CDY
www.vishay.com
°C/W
Unit
RoHS
COMPLIANT
Unit
°C
W
V
A
1

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si4431cdy Summary of contents

Page 1

... Top View Ordering Information: Si4431CDY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4431CDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... 0 0 1800 1500 1200 900 600 300 1.6 1.4 1 1.0 0.8 0 Si4431CDY Vishay Siliconix ° ° 125 °C C 0.0 0.5 1.0 1.5 2.0 2 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) ...

Page 4

... Si4431CDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.1 1.9 1.7 I 1.5 1.3 1 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.05 0.04 0.03 0. °C J 0.01 0.00 = 250 µ 100 125 150 100 ...

Page 5

... T - Case Temperature (°C) C Current Derating* 3.0 2.5 2.0 1.5 1.0 0.5 0.0 100 125 150 0 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si4431CDY Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www.vishay.com 150 5 ...

Page 6

... Si4431CDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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