irfm014a ETC-unknow, irfm014a Datasheet

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irfm014a

Manufacturer Part Number
irfm014a
Description
Transistor|mosfet|n-channel|60vv Br Dss|2.8ai D |sot-223
Manufacturer
ETC-unknow
Datasheet
©1999 Fairchild Semiconductor Corporation
*
Advanced Power MOSFET
FEATURES
Absolute Maximum Ratings
Thermal Resistance
When mounted on the minimum pad size recommended (PCB Mount).
T
Symbol
Symbol
Improved Gate Charge
Extended Safe Operating Area
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Lower Leakage Current : 10
Lower R
J
R
dv/dt
V
V
E
E
, T
I
I
P
T
I
DM
AR
DSS
D
GS
AS
AR
D
L
JA
STG
DS(ON)
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes,
: 0.097
1/8”
Junction-to-Ambient
(Typ.)
Characteristic
Characteristic
from case for 5-seconds
A
(Max.) @ V
*
A
=25
A
A
=25
=70
*
o
C
DS
o
o
C
C
)
*
= 60V
)
)
O
O
O
O
O
1
2
1
1
3
Typ.
--
- 55 to +150
0.017
2.25
0.21
Value
300
+ _
2.8
2.8
5.5
2.1
60
22
67
BV
R
I
IRFM014A
1. Gate 2. Drain 3. Source
20
D
SOT-223
DS(on)
= 2.8 A
DSS
Max.
1
60
= 0.14
= 60 V
3
2
o
Units
Units
C
W/
V/ns
mJ
mJ
W
o
V
A
V
A
A
/W
C
Rev. B
o
C

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irfm014a Summary of contents

Page 1

... Fairchild Semiconductor Corporation A (Max 60V DS (Typ.) Characteristic from case for 5-seconds Characteristic * IRFM014A DSS R = 0.14 DS(on 2 SOT-223 Gate 2. Drain 3. Source Value Units V 60 2 2.8 0.21 mJ V/ns 5.5 W 2.1 ...

Page 2

... IRFM014A Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R DS(on) On-State Resistance g Forward Transconductance fs C Input Capacitance iss C Output Capacitance ...

Page 3

... Fig 6. Gate Charge vs. Gate-Source Voltage = IRFM014A Notes : 250 s Pulse Test Gate-Source Voltage [V] ...

Page 4

... IRFM014A Fig 7. Breakdown Voltage vs. Temperature 1.2 1.1 1.0 0.9 0.8 -75 -50 - Junction Temperature [ J Fig 9. Max. Safe Operating Area 2 10 Operation in This Area is Limited by R DS(on 100 Notes : - 150 Single Pulse - Drain-Source Voltage [V] ...

Page 5

... GS Same Type as DUT 10V V DS DUT Current Sampling ( Resistor out 0.5 rated 10 DSS IRFM014A Charge 90 d(on) r d(off off BV DSS 1 ---- 2 -------------------- DSS ...

Page 6

... IRFM014A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT Driver Driver ) DUT ) DUT ) + Same Type as DUT • dv/dt controlled by “R ” G • I controlled by Duty Factor “D” S Gate Pulse Width -------------------------- D = Gate Pulse Period ...

Page 7

TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ...

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