irfh5304pbf International Rectifier Corp., irfh5304pbf Datasheet

no-image

irfh5304pbf

Manufacturer Part Number
irfh5304pbf
Description
Hexfet? Power Mosfet
Manufacturer
International Rectifier Corp.
Datasheet
www.irf.com
Notes  through
Features
Orderable part number
IRFH5304TRPBF
IRFH5304TR2PBF
Absolute Maximum Ratings
V
V
I
I
I
I
I
P
P
T
T
Applications
Low charge (typical 16nC)
Low Thermal Resistance to PCB (<2.7°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Features and Benefits
D
D
D
D
DM
DS
GS
D
D
J
STG
@ T
@ T
@ T
@ T
Control MOSFET for buck converters
@T
@ T
(@T
A
A
C(Bottom)
C(Bottom)
A
C(Bottom)
= 25°C
= 70°C
= 25°C
(@V
R
Q
c(Bottom)
DS(on) max
g (typical)
= 25°C
= 100°C
GS
V
= 25°C
I
DS
D
= 10V)
= 25°C)
are on page 8
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Package Type
4.5
30
16
79
g
g
Parameter
g
nC
A
V
GS
GS
GS
GS
@ 10V
@ 10V
@ 10V
@ 10V
Tape and Reel
Tape and Reel
Form
Standard Pack
results in Increased Power Density
IRFH5304PbF
Benefits
HEXFET
Quantity
Lower Switching Losses
Increased Power Density
Increased Reliability
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
-55 to + 150
4000
400
0.029
Max.
± 20
320
3.6
30
22
17
79
50
46
®
PQFN 5X6 mm
Power MOSFET
Note
Units
W/°C
°C
W
V
A
1
2/8/10

Related parts for irfh5304pbf

irfh5304pbf Summary of contents

Page 1

... Tape and Reel Tape and Reel Parameter @ 10V GS @ 10V GS @ 10V GS @ 10V IRFH5304PbF ® HEXFET Power MOSFET PQFN 5X6 mm Benefits Lower Switching Losses Increased Power Density Increased Reliability results in Increased Power Density ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ΔΒV /ΔT Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ΔV Gate Threshold Voltage Coefficient GS(th) I ...

Page 3

PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 150° 25° ...

Page 4

150°C 10 25°C 1.0 0.1 0.2 0.4 0.6 0.8 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 100 ...

Page 5

125° Gate-to-Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage D.U 20V 0.01 Ω t ...

Page 6

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 16. DUT Fig 17. Gate Charge Test Circuit 6 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ ...

Page 7

PQFN 5x6 Outline "B" Package Details For footprint and stencil design recommendations, please refer to application note AN-1154 at http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 5x6 Outline "B" Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER ...

Page 8

PQFN Tape and Reel Note: For the most current drawing please refer to IR website at: † Qualification information Qualification level Moisture Sensitivity Level RoHS compliant † Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability †† Higher ...

Related keywords