irf1310n International Rectifier Corp., irf1310n Datasheet - Page 2

• Manufacturer Part Number: irf1310n
• Description: 100v Single N-channel Hexfet Power Mosfet In A To-220ab Package
• Manufacturer: International Rectifier Corp.

Electrical Characteristics @ T
IRF1310N
Notes:
I
Source-Drain Ratings and Characteristics
I
V
R
V
g
Q
Q
Q
t
t
t
t
L
C
C
C
L
DSS
GSS
d(on)
r
d(off)
f
I
I
V
t
Q
t
V
SM
fs
D
S
S
rr
on
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
g
gs
gd
SD
Repetitive rating; pulse width limited by
Starting T
(BR)DSS
rr
R
max. junction temperature. ( See fig. 11 )
G
= 25 , I
/ T
J
J
= 25°C, L = 1.7mH
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
AS
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
= 22A. (See Figure 12)
Parameter
Parameter
J
= 25°C (unless otherwise specified)
I
Pulse width
T
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
SD
Min. Typ. Max. Units
2.0
–––
14
Min. Typ. Max. Units
J
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
175°C
22A, di/dt
1900 –––
0.11 –––
–––
–––
–––
–––
–––
–––
–––
450
230
––– 0.036
–––
––– -100
–––
4.5
11
56
45
40
–––
–––
–––
7.5
180
1.2
–––
–––
–––
250
100
110
–––
–––
–––
–––
–––
–––
–––
300µs; duty cycle
4.0
58
270
25
15
140
1.3
1.8
42
180A/µs, V
V/°C Reference to 25°C, I
µA
nC
nH
nA
ns
pF
S
µC
V
V
ns
A
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
D
D
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
DD
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
J
J
= 22A
= 22A
= 2.9
= 25°C, I
= 25°C, I
= 3.6
= V
= 25V, I
= 100V, V
= 80V, V
= 80V
= 50V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V, See Fig. 6 and 13
= 0V
V
2%.
(BR)DSS
GS
, I
D
See Fig. 10
D
D
D
S
F
= 250µA
GS
Conditions
Conditions
= 22A
= 250µA
= 22A
= 22A, V
,
= 22A
GS
= 0V, T
= 0V
D
= 1mA
GS
J
= 150°C
= 0V
G
G
S
+L
D
S
D
D
S
)