irfb7416

Manufacturer Part Numberirfb7416
DescriptionHexfet Power Mosfet
ManufacturerInternational Rectifier Corp.
irfb7416 datasheet
 
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Generation V Technology
Ultra Low On-Resistance
P-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques. Power dissipation
of greater than 0.8W is possible in a typical PCB mount
application.
Absolute Maximum Ratings
Parameter
I
@ T
= 25°C
Continuous Drain Current, V
D
A
I
@ T
= 70°C
Continuous Drain Current, V
D
A
I
Pulsed Drain Current
DM
P
@T
= 25°C
Power Dissipation
D
A
Linear Derating Factor
V
Gate-to-Source Voltage
GS
E
Single Pulse Avalanche Energy
AS
dv/dt
Peak Diode Recovery dv/dt
T
T
Junction and Storage Temperature Range
J,
STG
Thermal Resistance Ratings
R
Maximum Junction-to-Ambient
JA
1
S
2
S
3
S
4
G
T op V ie w
@ -10V
GS
@ - 10V
GS
Parameter
PD - 9.1356D
IRF7416
®
HEXFET
Power MOSFET
A
8
D
V
= -30V
DSS
7
D
6
D
5
R
= 0.02
D
DS(on)
S O -8
Max.
-10
-7.1
-45
2.5
0.02
± 20
370
-5.0
-55 to + 150
Typ.
Max.
–––
50
Units
A
W
mW/°C
V
mJ
V/ns
°C
Units
°C/W
8/25/97

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irfb7416 Summary of contents

  • Page 1

    Generation V Technology Ultra Low On-Resistance P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This ...

  • Page 2

    IRF7416 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

  • Page 3

    VGS TOP - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTT µ LSE W IDTH ° ...

  • Page 4

    IRF7416 rss oss ...

  • Page 5

    Q G -10V Charge Fig 9a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K .2 F 12V . -3mA I G Current Sampling Resistors Fig 9b. Gate Charge ...

  • Page 6

    IRF7416 20V Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms ...

  • Page 7

    Peak Diode Recovery dv/dt Test Circuit + D.U Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery ...

  • Page 8

    IRF7416 Package Outline SO8 Outline 0.25 (.010 0.25 (.010) ...

  • Page 9

    Tape & Reel Information SO8 Dimensions are shown in millimeters (inches TRO SIO ILLIM DIM ...

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