irf6710s2pbf International Rectifier Corp., irf6710s2pbf Datasheet

irf6710s2pbf

Manufacturer Part Number

irf6710s2pbf

Description

Power Mosfets

Manufacturer

International Rectifier Corp.

Datasheet

1.IRF6710S2PBF.pdf (10 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF6710S2PBF

Manufacturer:

Quantity:

1 641

Current page: 1 of 10
Download datasheet (275Kb)

Applicable DirectFET Outline and Substrate Outline

Description

The IRF6710S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET

achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is

compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection

soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-

age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6710S2TRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in

switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of

processors operating at higher frequencies. The IRF6710S2TRPbF has been optimized for the control FET socket of synchronous buck

operating from 12 volt bus converters.

‚

Absolute Maximum Ratings

www.irf.com

Ideal for CPU Core DC-DC Converters

RoHS Compliant Containing No Lead and Bromide

Low Profile (<0.7 mm)

Dual Sided Cooling Compatible

Ultra Low Package Inductance

Optimized for High Frequency Switching

Optimized for Control FET Application

Compatible with existing Surface Mount Techniques

100% Rg tested

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

@ T

= 25°C

= 70°C

= 25°C

2.0

Fig 1. Typical On-Resistance vs. Gate Voltage

4.0

V GS , Gate-to-Source Voltage (V)

6.0

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Single Pulse Avalanche Energy

Avalanche Current

8.0 10.0 12.0 14.0 16.0 18.0

T J = 125°C

T J = 25°C

I D = 12A

Ãg

Parameter

@ 10V

„

…

†

25V max ±20V max 4.5mΩ@ 10V 9.0mΩ@ 4.5V

8.8nC

Repetitive rating; pulse width limited by max. junction temperature.

Starting T

g tot

DSS

measured with thermocouple mounted to top (Drain) of part.

Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage

3.0nC

= 25°C, L = 0.49mH, R

I D = 10A

IRF6710S2TR1PbF

DirectFET™ Power MOSFET ‚

IRF6710S2TRPbF

Q G Total Gate Charge (nC)

1.3nC

gs2

V DS = 20V

VDS= 13V

Max.

100

±20

DS(on)

8.0nC

= 25Ω, I

DirectFET™ ISOMETRIC

4.4nC

= 10A.

oss

packaging to

DS(on)

Units

1.8V

gs(th)

4/8/08

Related parts for irf6710s2pbf

irf6710s2pbf Summary of contents

Page 1

RoHS Compliant Containing No Lead and Bromide l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ΔΒV /ΔT Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ΔV /ΔT Gate Threshold Voltage Coefficient GS(th) ...

Page 3

Absolute Maximum Ratings 25°C Power Dissipation 70°C Power Dissipation 25°C Power Dissipation D C Peak Soldering Temperature Operating Junction and J T Storage Temperature ...

Page 4

PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 100 175° 25° ...

Page 5

175°C 100 25° -40° 0.1 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage ...

Page 6

Duty Cycle = Single Pulse 10 0.01 1 0.05 0.10 Allowed avalanche Current vs avalanche 0.1 pulsewidth, tav, assuming ΔΤ 25°C and Tstart = 150°C. 0.01 1.0E-06 1.0E-05 Fig 16. Typical Avalanche Current Vs.Pulsewidth 30 TOP Single ...

Page 7

DUT 0 1K 20K S Fig 18a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 19a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 20a. Switching Time Test ...

Page 8

D.U.T + ƒ • • - • + ‚ „ • G • • SD • Fig 19. ™ Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations Optional additional ...

Page 9

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations DirectFET™ Part Marking Note: For the most current drawing please refer to IR website at www.irf.com DIMENSIONS METRIC IMPERIAL CODE MAX MIN MIN MAX 4.85 A ...

Page 10

DirectFET™ Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6710S2TRPBF). For 1000 parts on 7" reel, order IRF6710S2TR1PBF CODE ...

Related keywords

irf6710s2pbf datasheet
irf6710s2pbf data sheet
irf6710s2pbf pdf datasheet
irf6710s2pbf component
irf6710s2pbf part
irf6710s2pbf distributor
irf6710s2pbf RoHS
irf6710s2pbf datasheet download