irf7507pbf International Rectifier Corp., irf7507pbf Datasheet

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irf7507pbf

Manufacturer Part Number
irf7507pbf
Description
Hexfet Power Mosfet
Manufacturer
International Rectifier Corp.
Datasheet

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Part Number
Manufacturer
Quantity
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Part Number:
IRF7507PBF
Manufacturer:
AVAGO
Quantity:
4 780
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Description
Fifth
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is at
a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into
extremely thin application environments such as portable electronics and
PCMCIA cards.
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
R
V
I
I
I
P
P
V
V
dv/dt
T
D
D
DM
DS
J
D
D
GS
GSM
θJA
@ T
@ T
, T
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
Lead-Free
@T
@T
STG
A
A
Generation HEXFETs from International Rectifier utilize advanced
A
A
= 25°C
= 70°C
= 25°C
= 70°C
Soldering Temperature, for 10 seconds
Maximum Junction-to-Ambient
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µS
Parameter
Parameter

GS
GS
G2
G1
S2
S1
N-CHANNEL MOSFET
1
2
3
P-CHANNEL MOSFET
4
Top View
N-Channel
5.0
2.4
1.9
8
6
5
19
7
20
240 (1.6mm from case)
HEXFET
IRF7507PbF
D1
D1
D2
D2
-55 to + 150
Max.
100
Max.
1.25
0.8
10
± 12
16
R
V
®
DS(on)
DSS
Power MOSFET
P-Channel
-1.7
-5.0
-14
-1.4
-20
Micro8
0.135Ω 0.27Ω
N-Ch
PD - 95218
20V
mW/°C
Units
Units
P-Ch
-20V
V/ns
°C/W
°C
W
W
A
V
V
V
1

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irf7507pbf Summary of contents

Page 1

... N-CHANNEL MOSFET P-CHANNEL MOSFET Top View N-Channel 20 2.4 GS 1.9 GS  19 „ „ ‚ 5.0 240 (1.6mm from case) „ 95218 IRF7507PbF ® Power MOSFET D1 N-Ch P- 20V -20V DSS 0.135Ω 0.27Ω DS(on) Micro8 Max. Units P-Channel -20 V -1.7 -1.4 A -14 1. mW/° ...

Page 2

... IRF7507PbF Electrical Characteristics @ T Parameter (BR)DSS ∆ ∆ (BR)DSS J DS(ON) GS(th) fs DSS I Gate-to-Source Forward Leakage GSS d(on) r d(off) f iss oss rss Parameter Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig ‚ ≤ di/dt ≤ 66A/µs, V ...

Page 3

... Fig 5. Normalized On-Resistance Vs. Temperature www.irf.com 100 TOP 10 BOTTOM 1.5V 1 0.1 A 0.01 10 0.1 Fig 2. Typical Output Characteristics 100 10 1 0.1 A 4.0 0.4 Fig 4. Typical Source-Drain Diode 0.8 0.6 0.4 0.2 = 4.5V 0 Fig 6. Typical On-Resistance Vs. Drain IRF7507PbF VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V 1.5V 20µs PULSE WIDTH T = 150° Drain-to-Source Voltage ( 150° 25° 0.6 0.8 1.0 1.2 1 ...

Page 4

... IRF7507PbF 0.13 0.11 0. 2.4A D 0.07 0. Gate-to-Source Voltage (V) GS Fig 7. Typical On-Resistance Vs. Gate Voltage 500 1MHz SHORTED iss rss oss ds gd 400 C iss 300 C oss 200 C rss 100 Drain-to-Source Voltage (V) DS Fig 9 ...

Page 5

... Fig 15. Normalized On-Resistance Vs. Temperature www.irf.com 100 10 1 0.1 A 0.01 10 Fig 12. Typical Output Characteristics 10 0.1 0.01 A 4.5 5.0 Fig 14. Typical Source-Drain Diode 1.0 0.8 0.6 0.4 0.2 = -4.5V 0.0 A Fig 16. Typical On-Resistance Vs. Drain IRF7507PbF VGS TOP - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V -1.5V 20µs PULSE WIDTH T = 150° 0 Drain-to-Source Voltage ( 150° 25°C J ...

Page 6

... IRF7507PbF 0.300 0.250 ID = -1.7A 0.200 0.150 0.100 Gate-to-Source Voltage (V) GS Fig 17. Typical On-Resistance Vs. Gate Voltage 500 1MHz SHORTED iss rss oss ds gd 400 C iss 300 C oss 200 C rss 100 Drain-to-Source Voltage (V) DS Fig 19 ...

Page 7

... WW = (27-52) IF PRECEDED BY A LETT ER WORK WEEK W YEAR 01 A 2001 02 B 2002 03 C 2003 04 D 2004 2005 2006 2007 2008 24 X 2009 25 Y 2010 26 Z IRF7507PbF INCHES MILLIMETERS DIM MIN MAX MIN MAX A .036 .044 0.91 1.11 A1 .004 .008 0.10 0.20 B .010 .014 0.25 0.36 C .005 .007 0.13 0.18 D .116 ...

Page 8

... IRF7507PbF Micro8 Tape & Reel Information Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 2. CONTROLLING DIMENSION : MILLIMETER. 330.00 (12.992) MAX. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...

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