irf7343q International Rectifier Corp., irf7343q Datasheet

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irf7343q

Manufacturer Part Number
irf7343q
Description
55v Dual N- And P- Channel Hexfet Power Mosfet In A Lead-free So-8 Package
Manufacturer
International Rectifier Corp.
Datasheet

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irf7343qPBF
Manufacturer:
IR
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20 000
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irf7343qTRPBF
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TI/NSC
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irf7343qTRPBF
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www.irf.com
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Specifically designed for Automotive applications, these
HEXFET
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a
150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and
a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available
θ
Advanced Process Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Automotive [Q101] Qualified
Lead-Free
®
Power MOSFET's in a Dual SO-8 package utilize
in Tape & Reel.

ƒ
G2
G1
S2
S1
N-CHANNEL MOSFET
P-CHANNEL MOSFET
1
2
3
4
Top View
IRF7343QPBF
8
7
6
5
D1
D1
D2
D2
SO-8
®
DS(on)
DSS
PD - 96110
1

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irf7343q Summary of contents

Page 1

... The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is in Tape & Reel. also available θ www.irf.com IRF7343QPBF N-CHANNEL MOSFET ...

Page 2

... IRF7343QPbF (BR)DSS ∆ ∆ (BR)DSS J DS(ON) GS(th) fs DSS GSS d(on) r d(off) f iss oss rss Notes:  ‚ ≤ ≤ N-Channel I SD ≤ ≤ P-Channel I SD ƒ N-Channel P-Channel 2 J Ω  „ … ≤ ≤ ≤ ≤ Ω Ω ...

Page 3

... PULSE WIDTH Gate-to-Source Voltage (V) GS www.irf.com 100 TOP BOTTOM 10 ° 100 0.1 100 10 ° 25V 0 0.2 IRF7343QPbF VGS 15V 12V 10V 8.0V 6.0V 4.5V 4.0V 3.5V 3.0V 3.0V 20µs PULSE WIDTH T = 150 C ° Drain-to-Source Voltage ( 150 C ° ° ...

Page 4

... IRF7343QPbF 2.5 4. 2.0 1.5 1.0 0.5 0.0 -60 -40 - 100 120 140 160 T , Junction Temperature ( C) J 0.12 0.10 0. 4.7A D 0.06 0. Gate-to-Source Voltage ( 0.120 0.100 0.080 0.060 V = 10V GS 0.040 0 ° 200 160 120 Starting T , Junction Temperature ( C) VGS = 4.5V VGS = 10V 10 20 ...

Page 5

... SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 www.irf.com SHORTED 100 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7343QPbF 4. 48V 30V 12V Total Gate Charge (nC Notes: 1. Duty factor Peak ...

Page 6

... IRF7343QPbF 100 VGS TOP -15V -12V -10V -8.0V -6.0V -4.5V -4.0V -3.5V BOTTOM -3.0V 10 -3.0V 1 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS 100 ° 20µs PULSE WIDTH Gate-to-Source Voltage ( 100 TOP BOTTOM 10 1 ° 0.1 0.1 10 100 100 10 ° ...

Page 7

... V = -10V GS 0.080 0 80 100 120 140 160 ° 300 250 200 150 100 Starting T , Junction Temperature ( C) IRF7343QPbF VGS = -4.5V VGS = -10V Drain Current ( TOP -1.5A -2.7A BOTTOM -3. 100 125 150 ° J ...

Page 8

... IRF7343QPbF 1200 1MHz iss rss 960 oss iss 720 480 C oss 240 C rss Drain-to-Source Voltage (V) DS 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 SHORTED 100 0 0 ...

Page 9

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Page 10

... IRF7343QPbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. This product has been designed and qualified for the Automotive [Q101] market. ...

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