irf7342q International Rectifier Corp., irf7342q Datasheet

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irf7342q

Manufacturer Part Number
irf7342q
Description
-55v Dual P-channel Hexfet Power Mosfet In A Lead-free So-8 Package
Manufacturer
International Rectifier Corp.
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
irf7342qTRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
irf7342qTRPBF
Quantity:
3 190
Description
Absolute Maximum Ratings
Thermal Resistance
Specifically designed for Automotive applications, these
HEXFET
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a
150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a
wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available
www.irf.com
R
V
I
I
I
P
P
V
V
E
dv/dt
T
D
D
DM
J,
DS
D
D
GS
GSM
AS
θJA
@ T
@ T
Advanced Process Technology
Ultra Low On-Resistance
Dual P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Automotive [Q101] Qualified
Lead-Free
@T
@T
T
STG
C
C
C
C
®
= 25°C
= 70°C
= 25°C
= 70°C
Power MOSFET's in a Dual SO-8 package utilize
in Tape & Reel.
Maximum Junction-to-Ambient
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µs
Single Pulse Avalanche Energy‚
Peak Diode Recovery dv/dt ƒ
Junction and Storage Temperature Range
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G2
G1
S2
S1
1
2
3
4
Top View
Typ.
IRF7342QPbF
–––
HEXFET
8
7
6
5
-55 to + 150
Max.
0.016
D1
D1
D2
-3.4
-2.7
± 20
114
D2
-55
-27
2.0
1.3
5.0
30
SO-8
®
R
DS(on)
Power MOSFET
V
Max.
62.5
DSS
= 0.105Ω
= -55V
PD - 96109
Units
Units
W/°C
°C/W
V/ns
°C
V
A
V
V
1

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irf7342q Summary of contents

Page 1

... Gate-to-Source Voltage Single Pulse tp<10µs GSM E Single Pulse Avalanche Energy‚ AS dv/dt Peak Diode Recovery dv/dt ƒ Junction and Storage Temperature Range J, STG Thermal Resistance Parameter R Maximum Junction-to-Ambient θJA www.irf.com IRF7342QPbF HEXFET Top View Max. @ 10V ...

Page 2

... IRF7342QPbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs DSS Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge gs Q Gate-to-Drain ("Miller") Charge ...

Page 3

... Gate-to-Source Voltage (V) GS www.irf.com 100 TOP BOTTOM 10 1 ° 0.1 0.1 100 100 150 C ° -25V 0.1 0 IRF7342QPbF VGS -15V -12V -10V -8.0V -6.0V -4.5V -4.0V -3.5V -3.0V -3.0V 20µs PULSE WIDTH T = 150 C ° Drain-to-Source Voltage ( 150 C ° J ° ...

Page 4

... IRF7342QPbF 2.0 -3 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature ( C) J 0.45 0. 0.15 0. Gate-to-Source Voltage ( 0.240 0.200 0.160 0.120 V = -10V GS 0.080 0 80 100 120 140 160 ° 300 250 200 150 100 Starting T , Junction Temperature ( C) VGS = -4.5V VGS = -10V ...

Page 5

... SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 www.irf.com SHORTED 100 0 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7342QPbF -3.1A V =-48V DS V =-30V DS V =-12V Total Gate Charge (nC Notes: 1. Duty factor Peak ...

Page 6

... IRF7342QPbF SO-8 Package Outline Dimensions are shown in millimeters (inches & " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PI PSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $à ...

Page 7

... NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. This product has been designed and qualified for the Automotive [Q101] market. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com IRF7342QPbF 12.3 ( .484 ) 11.7 ( .461 ) FEED DIRECTION 14.40 ( .566 ) 12.40 ( .488 ) Data and specifications subject to change without notice. Qualification Standards can be found on IR’ ...

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