BT152-600 SemiWell Semiconductor Co., Ltd., BT152-600 Datasheet

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BT152-600

Manufacturer Part Number
BT152-600
Description
Silicon Controlled Rectifiers
Manufacturer
SemiWell Semiconductor Co., Ltd.
Datasheet

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Absolute Maximum Ratings
Silicon Controlled Rectifiers
Features
General Description
Standard gate triggering SCR is suitable for the application where
requiring high bidirectional blocking voltage capability and also
suitable for over voltage protection ,motor control circuit in power
tool, inrush current limit circuit and heating control system.
Nov, 2003. Rev. 0
Symbol
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( I
Low On-State Voltage (1.4V(Typ.)@ I
Non-iosolated Type
I
P
V
T(RMS)
V
I
T
I
I
di/dt
P
T(AV)
G(AV)
FGM
TSM
RGM
DRM
STG
I
T
GM
2
J
t
SemiWell
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I
Critical rate of rise of on-state current
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
2
t
for Fusing
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
Semiconductor
Parameter
T(RMS)
= 20 A )
( T
J
TM
= 25°C unless otherwise specified )
)
Half Sine Wave : T
180° Conduction Angle
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
t = 8.3ms
Over any 20ms period
Condition
C
= 103 °C
Symbol
TO-220
2. Anode
BT152-600
Preliminary
1
- 40 ~ 125
- 40 ~ 150
2 3
Ratings
12.7
600
220
242
0.5
20
50
20
5
5
3. Gate
1. Cathode
Units
A/
A
°C
°C
W
W
A
V
V
A
A
A
2
s
1/5

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BT152-600 Summary of contents

Page 1

... 25°C unless otherwise specified ) J Condition Half Sine Wave : T C 180° Conduction Angle 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive t = 8.3ms Over any 20ms period Preliminary BT152-600 Symbol 3. Gate ○ ○ ○ 2. Anode 1. Cathode TO-220 Ratings Units 600 = 103 °C 12 ...

Page 2

... BT152-600 Electrical Characteristics Symbol Items Repetitive Peak Off-State I DRM Current V Peak On-State Voltage ( Gate Trigger Current ( Gate Trigger Voltage ( Non-Trigger Gate Voltage (1) GD Critical Rate of Rise Off-State dv/dt Voltage I Holding Current H R Thermal Impedance th(j-c) R Thermal Impedance th(j-a) ※ Notes : 1. Pulse Width ≤ 1 Duty cycle ≤ ...

Page 3

... Fig 4. Thermal Response 3.5 4.0 4 Fig 6. Typical Gate Trigger Current vs 0.1 100 150 -50 BT152-600 θ = 180 π π 2 θ 360° Average On-State Current [ Time (sec) Junction Temperature ...

Page 4

... BT152-600 Fig 7. Typical Holding Current 10 1 0.1 - Junction Temperature[ 4/5 Fig 8. Power Dissipation 100 150 θ = 120 o θ θ θ Average On-State Current [A] o θ = 180 14 ...

Page 5

... C1 BT152-600 Inch Typ. Max. 0.398 0.264 0.373 0.524 0.055 0.067 0.098 0.134 0.055 0.106 0.203 0.102 0.061 0.024 0.039 0.142 M 1. Cathode 2. Anode 3. Gate 5/5 ...

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