ssbd2070ct Silikron Semiconductor Co.,LTD., ssbd2070ct Datasheet

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ssbd2070ct

Manufacturer Part Number
ssbd2070ct
Description
Schottky Barrier Rectifier
Manufacturer
Silikron Semiconductor Co.,LTD.
Datasheet
Main Product Characteristics:
Features and Benefits:
Description:
Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC
convertors; this product special design for high forward and reverse surge capability
Absolute Rating:
Thermal Resistance
Electrical Characterizes
©
Symbol
Symbol
V
Symbol
Silikron Semiconductor CO., LTD.
V
I
R
R
R(RMS)
I
I
T
F(AV)
RRM
Vf(max)
FSM
T
T
RRM
VRRM
V
V
θJC
θJC
High Junction Temperature
High ESD Protection
High Forward & Reverse Surge capability
stg
I
j
J
R
(max)
R
F
IF
Peak Repetitive Reverse Voltage
RMS Reverse Voltage
Average Forward Current
Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal)
Peak Repetitive Reverse Surge Current(Tp=2us)
Maximum operation Junction Temperature Range
Storage Temperature Range
Maximum Thermal Resistance Junction To
Case(per leg)
Reverse Breakdown Voltage
Forward Voltage Drop
Leakage Current
Characterizes
2× 10A
150℃
0.65V
70V
@T
A
=25℃ unless otherwise specified
Characterizes
Characterizes
www.silikron.com
2011.7.15
TO220
SSBD2070CT
Min
70
Per diode
Per device
Typ
SSBD2070CT/ SSBD2070CTF
Version: 1.0
TO220
TO220F
0.65
Max
0.6
0.2
50
TO220F
SSBD2070CTF
Unit
mA
V
V
I
I
I
V
V
R
F
F
page
-55~150
-55~150
=10A, T
=10A, T
R
R
=0.5mA
=70V, T
=70V, T
Value
Value
180
Test Condition
70
49
10
20
2
2
4
1of6
J
J
=25℃
=125℃
J
J
=25℃
=125℃
Schematic Diagram
℃/W
℃/W
Unit
Unit
V
V
A
A
A
A

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ssbd2070ct Summary of contents

Page 1

... Electrical Characterizes @T A Symbol Characterizes V Reverse Breakdown Voltage R V Forward Voltage Drop F I Leakage Current R © Silikron Semiconductor CO., LTD. SSBD2070CT/ SSBD2070CTF TO220 TO220F SSBD2070CT SSBD2070CTF Characterizes Per diode Per device Characterizes TO220 TO220F =25℃ unless otherwise specified Min Typ Max Unit 70 0 ...

Page 2

... I-V Curves: Figure 1:Typical Forward Characteristics Figure 3:Typical Reverse Characteristics © Silikron Semiconductor CO., LTD. SSBD2070CT/ SSBD2070CTF Figure 2:Typical Capacitance Characteristics 2011.7.15 Version: 1.0 www.silikron.com page 2of6 ...

Page 3

... Mechanical Data: TO220: © Silikron Semiconductor CO., LTD. SSBD2070CT/ SSBD2070CTF 2011.7.15 Version: 1.0 www.silikron.com page 3of6 ...

Page 4

... TO220F: © Silikron Semiconductor CO., LTD. SSBD2070CT/ SSBD2070CTF 2011.7.15 Version: 1.0 www.silikron.com page 4of6 ...

Page 5

... Ordering and Marking Information Device Marking: SSBD2070CT&SSBD2070CTF Devices per Unit Packag Units/ Tubes/Inne e Type Tube r Box TO220 50 20 TO220F 50 20 Reliability Test Program Test Item Conditions High Tj=125℃ to 150℃ @ Temperature 80% of Max Reverse VDSS/VCES/VR Bias(HTRB) © Silikron Semiconductor CO., LTD. ...

Page 6

... Customer Service Worldwide Sales and Service: Sales@silikron.com Technical Support: Technical@silikron.com Suzhou Silikron Semiconductor Corp. 11A, 428 Xinglong Street, Suzhou Industrial Park, P.R.China TEL: (86-512) 62560688 FAX: (86-512) 65160705 E-mail: Sales@silikron.com © Silikron Semiconductor CO., LTD. SSBD2070CT/ SSBD2070CTF 2011.7.15 Version: 1.0 www.silikron.com page 6of6 ...

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