s1227-66br Hamamatsu Photonics, K.K.,, s1227-66br Datasheet

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s1227-66br

Manufacturer Part Number
s1227-66br
Description
Si Photodiode For Uv To Visible, Precision Photometry; Suppressed Ir Sensitivity
Manufacturer
Hamamatsu Photonics, K.K.,
Datasheet
P H O T O D I O D E
Si photodiode
S1227 series
* Window material Q: quartz glass, R: resin coating
S1227-16BQ
S1227-16BR
S1227-33BQ
S1227-33BR
S1227-66BQ
S1227-66BR
S1227-1010BQ
S1227-1010BR
S1227-16BQ
S1227-16BR
S1227-33BQ
S1227-33BR
S1227-66BQ
S1227-66BR
S1227-1010BQ 190 to 1000
S1227-1010BR 320 to 1000
General ratings / Absolute maximum ratings
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type No.
Type No.
l
l
l
For UV to visible, precision photometry; suppressed IR sensitivity
Features
High UV sensitivity: QE 75 % ( =200 nm)
Suppressed IR sensitivity
Low dark current
190 to 1000
320 to 1000
190 to 1000
320 to 1000
190 to 1000
320 to 1000
response
Spectral
Dimensional
range
material *
(nm)
Window
outline/
/Q
/R
/Q
/R
/Q
/R
/Q
/R
sensitivity
wavelength
Peak
(nm)
720
p
8.9 × 10.1
15 × 16.5
0.36 0.10 0.12 0.34
0.43
0.36 0.10 0.12 0.34
0.43
0.36 0.10 0.12 0.34
0.43
0.36 0.10 0.12 0.34
0.43
Package
2.7 × 15
6 × 7.6
(mm)
p
Photo sensitivity
Min. Typ. 633 nm (µA) (µA)
200 nm
-
-
-
-
(A/W)
S
-
-
-
-
area size
1.1 × 5.9
2.4 × 2.4
5.8 × 5.8
10 × 10
Active
He-Ne
(mm)
Laser
0.39
0.39
0.39
0.39
Short circuit
Min. Typ.
2.2
2.2
11
13
32
36
2
2
current
100 lx
Isc
l
l
Applications
active area
Effective
3.2
3.7
3.0
3.7
16
19
44
53
Analytical equipment
Optical measurement equipment, etc.
(mm
100
5.9
5.7
33
V
2
current
R
)
Dark
Max.
(pA)
=10 m V
20
50
I
5
5
D
coefficient
(times/° C)
Temp.
T
1.12
Reverse
V
voltage
CID
R
(V)
Max.
5
R
V
Absolute maximum ratings
L
Rise
time
R
(µs)
=1 k
0.5
0.5
=0 V
tr
2
7
temperature
f=10 kHz
Terminal
capacitance
-20 to +60
Operating
V
3000
R
(pF)
170
160
950
Topr
Ct
(°C)
=0 V
V
resistance
Min. Typ. (W/Hz
0.5 5
0.2 2
Shunt
R
2
2
(G )
Rsh
=10 mV
20
20
temperature
-20 to +80
Storage
2.5 × 10
2.1 × 10
2.5 × 10
2.1 × 10
5.0 × 10
4.2 × 10
8.0 × 10
6.7 × 10
Tstg
(°C)
NEP
1/2
-15
-15
-15
-15
-15
-15
-15
-15
)
1

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s1227-66br Summary of contents

Page 1

... S1227-16BR 0.43 190 to 1000 S1227-33BQ 0.36 0.10 0.12 0.34 320 to 1000 S1227-33BR 0.43 720 190 to 1000 S1227-66BQ 0.36 0.10 0.12 0.34 320 to 1000 S1227-66BR 0.43 S1227-1010BQ 190 to 1000 0.36 0.10 0.12 0.34 S1227-1010BR 320 to 1000 0.43 * Window material Q: quartz glass, R: resin coating Applications l Analytical equipment l Optical measurement equipment, etc. Active Effective area size active area ...

Page 2

... AMBIENT TEMPERATURE (˚C) 2 (Typ. Ta=25 ˚C) 800 1000 KSPDB0094EA KSPDB0095EA (Typ mV) R S1227-16BQ/ KSPDB0097EA S1227 series Si photodiode Photo sensitivity temperature characteristic +1.5 +1.0 +0.5 0 -0.5 190 400 600 800 1000 WAVELENGTH (nm) Dark current vs. reverse voltage (Typ ˚ 100 pA S1227-1010BQ/BR S1227-66BQ/BR ...

Page 3

... ACTIVE AREA PHOTOSENSITIVE SURFACE 0.5 LEAD 6.6 ± 0.3 4.5 ± 0.2 ANODE TERMINAL MARK KSPDA0096EA S1227 series ANODE MARK Resin coating may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0095EA Resin coating may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0097EA ...

Page 4

... United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 4 S1227-66BR ACTIVE AREA PHOTOSENSITIVE SURFACE ...

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