s1226-8bq Hamamatsu Photonics, K.K.,, s1226-8bq Datasheet

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s1226-8bq

Manufacturer Part Number
s1226-8bq
Description
Si Photo Diode
Manufacturer
Hamamatsu Photonics, K.K.,
Datasheet
P H O T O D I O D E
Si photodiode
S1226 series
l
l
l
l
For UV to visible, precision photometry; suppressed IR sensitivity
Features
High UV sensitivity: QE 75 % (λ=200 nm)
Suppressed IR sensitivity
Low dark current
High reliability
λ
λ
λ
l
l
Applications
lx
Analytical equipment
Optical measurement equipment, etc.

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s1226-8bq Summary of contents

Page 1

... photodiode S1226 series For UV to visible, precision photometry; suppressed IR sensitivity Features l High UV sensitivity (λ=200 nm) l Suppressed IR sensitivity l Low dark current l High reliability λ λ λ Applications l Analytical equipment l Optical measurement equipment, etc. lx Ω Ω ...

Page 2

... Photo sensitivity temperature characteristic (Typ. Ta =25 ˚C) +1.5 +1.0 +0.5 0 -0.5 1000 190 KSPDB0106EA Dark current vs. reverse voltage = 100 100 0.01 KSPDB0107EA S1226 series Si photodiode (Typ. ) 400 600 800 1000 WAVELENGTH (nm) (Typ. Ta=25 ˚C) S1226-8BQ/BK S1226-5BQ/BK, -18BQ/BK S1226-44BQ/BK 0.1 1 REVERSE VOLTAGE (V) KSPDB0030EA 10 KSPDB0108EA ...

Page 3

... V 1 TΩ S1226-18BQ/BK, -5BQ/BK 100 GΩ 10 GΩ S1226-44BQ/BK 1 GΩ 100 MΩ 10 MΩ S1226-8BQ/BK 1 MΩ 100 kΩ 10 kΩ - AMBIENT TEMPERATURE (˚C) Si photodiode =10 mV KSPDB0109EA S1226 series ...

Page 4

... S1226-18BQ/-18BK 5.4 ± 0.2 WINDOW 4.7 ± 0.1 3.0 ± 0.2 PHOTOSENSITIVE SURFACE 0.45 LEAD CONNECTED TO CASE S1226-8BQ/-8BK 13.9 ± 0.2 WINDOW 12.35 ± 0.1 10.5 ± 0.1 PHOTOSENSITIVE SURFACE 0.45 LEAD 7.5 ± 0.2 MARK ( 1.4) The K type borosilicate glass window may extend a maximum CONNECTED TO CASE of 0.2 mm above the upper surface of the cap. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www ...

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