ftp10n60 ARK Microelectronics Co., Ltd., ftp10n60 Datasheet - Page 2

• Manufacturer Part Number: ftp10n60
• Description: 600v N-channel Mosfet
• Manufacturer: ARK Microelectronics Co., Ltd.

Electrical Characteristics
OFF Characteristics
BV
△BV
I
I
ON Characteristics
R
V
gfs
Dynamic Characteristics
ARK Microelectronics Co., Ltd.
Symbol
Symbol
Symbol
DSS
GSS
Resistive Switching Characteristics
t
DS(ON)
t
GS(TH)
d(OFF)
C
C
d(ON)
C
Q
Q
t
t
Q
rise
DSS
fall
Symbol
OSS
RSS
ISS
GD
GS
G
DSS
/△T
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
J
Drain-to-Source Breakdown
Voltage
Breakdown Voltage Temperature
Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
Parameter
Parameter
Parameter
Parameter
www.ark-micro.com
Min.
Min.
Min.
Min.
2/11
600
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ.
Typ.
Typ.
1809
Typ.
10.3
27.4
25.3
0.65
142
116
120
0.7
7.7
54
44
77
--
--
--
--
--
--
Essentially independent of operating temperature
Essentially independent of operating temperature
Max.
Max.
Max.
Max.
-100
0.75
100
100
4.0
20
--
--
--
--
--
--
--
--
--
--
--
--
--
FTP10N60/FTA10N60
V/℃
Unit
Unit
Unit
Unit
µA
nA
nC
pF
ns
V
Ω
V
T
T
S
C
C
=25℃ unless otherwise specified
=25℃ unless otherwise specified
V
V
V
V
V
V
Reference to 25℃,
DS
DS
GS
DS
DS
Test Conditions
Test Conditions
Test Conditions
Test Conditions
Rev. 2.0 Mar. 2009
GS
=480V, V
=10V, I
= V
=600V, V
=0V, I
=40V, I
V
V
V
I
T
V
f=1.0MH
V
Figure 14
Figure 15
V
D
R
V
I
GS
DD
DD
C
GS
=250µA
I
DS
D
GS
GS
G
=125℃
GS
D
=10A
=+30V
=25Ω
=-30V
=300V
=300V
10A
=25V
=10V
, I
=0V
D
D
D
=250µA
D
=6.0A
=250µA
=10A
GS
GS
Z
=0V,
=0V
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