S100-28 ETC-unknow, S100-28 Datasheet
S100-28
Manufacturer Part Number
S100-28
Description
Silicon Power Transistor
Manufacturer
ETC-unknow
Datasheet
1.S100-28.pdf
(1 pages)
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200
CHARACTERISTICS
DESCRIPTION:
The
linear applications up to 30 MHz.
FEATURES:
MAXIMUM RATINGS
SYMBOL
P
V
V
V
Omnigold™ Metalization System
T
VSWR
P
High linear power output
IMD = -32 dBc max. at 100 W
BV
BV
BV
T
I
DISS
CES
CEO
EBO
STG
JC
IMD
C
I
G
h
C
J
G
CES
ASI 100-28
FE
CEO
EBO
ob
CES
C
= 16 dB min. at 100 W/30 MHz
P
NPN SILICON RF POWER TRANSISTOR
250 W @ T
I
I
I
V
V
V
V
P
-65 °C to +200 °C
-65 °C to +150 °C
C
C
E
CE
CE
CB
CE
OUT
= 50 mA
= 100 mA
= 5.0 mA
= 28 V
= 5.0 V
= 28 V
= 28 V
is designed for HF
0.7 °C/W
= 100 W (PEP)
4.0 V
20 A
70 V
33 V
NONETEST CONDITIONS
T
C
C
= 25 °C
= 25 °C
I
P
C
IN
= 10 A
(PEP)
= 2.5 W
Specifications are subject to change without notice.
f = 1.0 MHz
f = 30 MHz
PACKAGE STYLE .500 4L FLG
MINIMUM TYPICAL MAXIMUM
DIM
A
B
C
D
E
F
G
H
I
J
K
L
FAX (818) 765-3004
4.0
33
70
10
16
65
---
FULL R
.720 / 18.28
.970 / 24.64
.495 / 12.57
.980 / 24.89
H
.220 / 5.59
.245 / 6.22
.003 / 0.08
.090 / 2.29
.150 / 3.81
C
MINIMUM
inches / mm
B
E
A
B
E
270
.112x45°
D
.125 / 3.18
.125 / 3.18
G
F
C
E
L
1.050 / 26.67
.7.30 / 18.54
.980 / 24.89
.505 / 12.83
I
MAXIMUM
.230 / 5.84
.255 / 6.48
.007 / 0.18
.110 / 2.79
.175 / 4.45
.280 / 7.11
inches / mm
J
K
100
-32
30
---
Ø.125 NOM.
:1
S100-28
UNITS
dBc
mA
REV. B
pF
dB
---
---
%
V
V
V
1/1
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