ndf10n60zh ON Semiconductor, ndf10n60zh Datasheet
ndf10n60zh
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ndf10n60zh Summary of contents
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... A DSS DS(ON) 600 V 0.75 W MARKING DIAGRAM NDF10N60ZH AYWW TO−220FP CASE 221AH Gate STYLE 1 Drain A = Location Code Y = Year WW = Work Week H = Halogen Free Package N−Channel D (2) G (1) S (3) ORDERING INFORMATION Device Package Shipping NDF10N60ZH TO−220FP 50 Units / Rail (In Development) Publication Order Number: NDF10N60ZH/D Source ...
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THERMAL RESISTANCE Junction−to−Case (Drain) Junction−to−Ambient Steady State (Note 4) ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain−to−Source Leakage Current Gate−to−Source Forward Leakage ON CHARACTERISTICS (Note 5) Static Drain−to−Source On−Resistance Gate Threshold Voltage Forward Transconductance DYNAMIC ...
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T = 25° 7 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.80 0.75 0.70 0.65 0.60 5 ...
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C 1500 iss 1000 C rss 500 C oss 100 125 V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 8. Capacitance Variation 1000 V = 300 V ...
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... Figure 13. Thermal Impedance (Junction−to−Case) Figure 14. Mounting Position for Isolation Test Measurement made between leads and heatsink with all leads shorted together. *For additional mounting information, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. TYPICAL CHARACTERISTICS 100 ms ...
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... DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00. MILLIMETERS DIM MIN MAX A 4.30 4.70 A1 2.50 2.90 A2 2.50 2.70 b 0.54 0.84 b2 1.10 1.40 c 0.49 0.79 D 14.22 15.88 E 9.65 10.67 e 2.54 BSC H1 5.97 6.48 L 12.70 14.73 L1 --- 2.80 P 3.00 3.40 Q 2.80 3.20 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NDF10N60ZH/D ...