ssp7200n SeCoS Halbleitertechnologie GmbH, ssp7200n Datasheet
ssp7200n
Manufacturer Part Number
ssp7200n
Description
3 A, 200 V, Rds On 400 M N-channel Enhancement Mosfet
Manufacturer
SeCoS Halbleitertechnologie GmbH
Datasheet
1.SSP7200N.pdf
(2 pages)
http://www.SeCoSGmbH.com/
30-Jul-2010 Rev. A
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process
to provide low R
Typical applications are DC-DC converters and power management in
portable and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
FEATURES
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction to Ambient
a.
b.
Notes
V
Low R
Low thermal impedance copper leadframe SOP-8PP saves board
space.
Fast switching speed.
High performance trench technology.
200
DS
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
(V)
DS(on)
PRODUCT SUMMARY
Elektronische Bauelemente
DS(on)
450@V
provides higher efficiency and extends battery life.
400@V
R
A
and to ensure minimal power loss and heat dissipation.
DS
PARAMETER
B
(on) (m
GS
GS
A
= 4.5V
= 10V
A
A suffix of “-C” specifies halogen & lead-free
I
D
3.0
2.8
THERMAL RESISTANCE DATA
(A)
Steady State
RoHS Compliant Product
A
t≦10 sec
T
T
T
T
A
A
A
A
=25°C
=70°C
=25°C
=70°C
Gate
SYMBOL
T
J
R
V
V
, T
I
P
I
DM
I
θJA
DS
GS
D
S
D
STG
Source
Drain
N-Channel Enhancement MOSFET
(T
A
= 25°C unless otherwise specified)
3 A, 200 V, R
SSP7200N
RATING
-55 ~ 150
Any changes of specification will not be informed individually.
200
2.4
2.3
5.0
3.2
20
50
25
65
3
REF.
DS(ON)
C
D
G
A
B
E
F
Min.
0.20
3.61
D
1.00
5.70
5.40
0.08
3.60
Millimeter
400 m
SOP-8PP
d
Max.
1.10
5.80
0.30
3.98
6.10
0.20
3.99
B
e
G
REF.
E
θ
b
d
e
g
UNIT
θ
°C / W
A
Min.
0.33
1.35
1.10
°C
b
W
V
V
A
A
A
0
Millimeter
1.27BSC
°
Page 1 of 2
g
C
Max.
0.51
1.75
12
F
-
°
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ssp7200n Summary of contents
Page 1
... =70° =25° =70° STG THERMAL RESISTANCE DATA t≦10 sec R θJA Steady State SSP7200N 3 A, 200 V, R 400 m DS(ON) SOP-8PP B D θ Millimeter REF. REF. Min. Max. A 1.00 1.10 θ B 5.70 5. 0.20 0. ...
Page 2
... SD b Dynamic (ON (OFF SSP7200N 3 A, 200 V, R 400 m DS(ON) N-Channel Enhancement MOSFET TEST CONDITIONS - 250μ 100 0V 12V ± 160V μ 160V, V ...