cha5052-qgg United Monolithic Semiconductors, cha5052-qgg Datasheet
cha5052-qgg
Available stocks
Related parts for cha5052-qgg
cha5052-qgg Summary of contents
Page 1
... High Power Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA5052-QGG is a three-stage monolithic high power amplifier. The circuit is manufactured with a power HEMT process, 0.15µm gate length, via holes through the substrate supppplied in RoHS compliant SMD package. Main Features ■ ...
Page 2
... CHA5052-QGG Electrical Characteristics Tamb=25° and Id = 700mA, CW biasing mode. These values are representative of onboard measurements as defined on the drawing 96402 Symbol Fop Operating frequency range G_lin Small signal gain from 7 to 12GHz P1dB Output power at 1dB compression Psat Saturated output power ...
Page 3
... CHA5052-QGG P (S12) (° (S22) P (S22) (° ) -29 -1,7 149 -119 -1,5 118 -21 -1,5 88 -112 -1,5 57 111 -1,3 27 -62 -1,2 -4 156 -1,2 -35 43 -1,4 -68 -119 -2,0 -104 83 -3,8 -143 27 -7,9 -180 94 -14,7 161 40 -18,8 -179 3 -18,0 -173 28 -17,9 177 -5 -18,8 164 -54 -20,6 149 ...
Page 4
... CHA5052-QGG Typical Measured Performance Tamb = +25° C, Vd1=Vd2=Vd3=+5V, Id (Quiescent)=700mA , CW biasing mode Measurements in the package access planes, using the proposed land pattern & board 96402 -10 -15 -20 -25 -30 -35 -40 - Ref: DSCHA5052QGG7033 - 02 Feb 07 Route Dé ...
Page 5
... Tel.: +33 ( Fax: +33 ( P1dB (dBm) Tamb= +25° C Tamb= +75° Frequency (GHz) +25° C +75° C -40° Input power (dBm) 5/10 /Specifications subject to change without notice CHA5052-QGG Linear Gain (dB ...
Page 6
... CHA5052-QGG Gain & Pout versus Pin @ RFfreq=7GHz, 25° Gain (dB -20 -18 -16 -14 Gain & Pout versus Pin @ RFfreq=15GHz, 25° Gain (dB -20 -18 -16 -14 Ref: DSCHA5052QGG7033 - 02 Feb 07 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel ...
Page 7
... High Power Amplifier C/I3 versus Pout DCL at Temperature –40, +25, +75° C Ref: DSCHA5052QGG7033 - 02 Feb 07 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 ( Fax: +33 ( Frequency 7 to 10GHz Frequency 12 to 16GHz 7/10 /Specifications subject to change without notice CHA5052-QGG ...
Page 8
... CHA5052-QGG Note Due to ESD protection, RFin and RFout are DC grounded, an external capacitance might be requested to isolate the product from external voltage that could be present on the RF accesses RFin RFin ESD protections are also implemented on gate accesses. The DC connections do not include any decoupling capacitor in package, therefore it is mandatory to provide a good external DC decoupling on the PC board, as close as possible to the package ...
Page 9
... For the mounting process standard techniques involving solder paste and a suitable reflow process can be used. For further details, see application note AN0017. Ref: DSCHA5052QGG7033 - 02 Feb 07 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 ( Fax: +33 ( 9/10 /Specifications subject to change without notice CHA5052-QGG ...
Page 10
... Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref: DSCHA5052QGG7033 - 02 Feb 07 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 ( Fax: +33 ( 16GHz High Power Amplifier CHA5052-QGG/XY 10/10 /Specifications subject to change without notice via holes 0.3 Metallised ...