cha4042 United Monolithic Semiconductors, cha4042 Datasheet

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cha4042

Manufacturer Part Number
cha4042
Description
23-34ghz High Power Amplifier
Manufacturer
United Monolithic Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CHA4042
Quantity:
1 400
Part Number:
cha4042-99F/00
Manufacturer:
UMS
Quantity:
1 400
Description
The CHA4042 is a three-stage pHEMT
HPA MMIC designed for point-to-point and
multi-point
applications.
25dBm nominal output power at 1dB gain
compression over the 23-34GHz frequency
range, and 20dB small signal gain. This
product will be available in chip form.
Ref. : DSCHA40422218 -06-Aug.-02
25
20
15
10
5
0
20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35
23–34GHz High Power Amplifier
radio,
The
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
and
CHA4042
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Predicted
GaAs Monolithic Microwave IC
United Monolithic Semiconductors S.A.S.
Predicted Gain & Return Loss
other
Input Rloss
Gain
Ka-band
provides
Frequency (GHz)
Gain
1/6
¾
¾
¾
¾
¾
¾
¾
¾
Main Features
&
Frequency Range:
Gain:
Output Power (P -1dB ): 25dBm
Output TOI:
Input Return Loss:
Output Return Loss:
Bias:
Dimensions: 1.93 x 1.09 x 0.07mm
Return
Specifications subject to change without notice
Output Rloss
CHA4042
23-34GHz
20dB
33dBm
18dB
11dB
6V, 300mA
0
-5
-10
-15
-20
-25

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cha4042 Summary of contents

Page 1

... High Power Amplifier GaAs Monolithic Microwave IC Description The CHA4042 is a three-stage pHEMT HPA MMIC designed for point-to-point and multi-point radio, and other applications. The CHA4042 25dBm nominal output power at 1dB gain compression over the 23-34GHz frequency range, and 20dB small signal gain. This product will be available in chip form ...

Page 2

... Operation of this device above any one of these parameters may cause • permanent damage. Duration < • AuSn solder mount to CuW or CuMo carrier assumed • Ref. : DSCHA40422218 -06-Aug.-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 23-34GHz High Power Amplifier ...

Page 3

... Typical Bias Conditions Tamb °C Symbol Drain bias voltage Gate bias voltage Idd Total drain current Ref. : DSCHA40422218 -06-Aug.-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 Vd2 Vg2 Vg3 Parameter Values 3/6 ...

Page 4

... Bond Pad #10: VD3 Bond Pad #12: VD2 Bond Pad #13: VD1 Bond Pad #15 Chip size : 1930µm +/-35µm x 1090µm +/- 35µm Ref. : DSCHA40422218 -06-Aug.-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 23-34GHz High Power Amplifier 12 11 ...

Page 5

... High Power Amplifier MMIC Assembly and Bonding Diagram ( not to scale ) 50 Ohm line RFin Ref. : DSCHA40422218 -06-Aug.-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 0.01µ 100p 100p VD1 VD2 VD3 100p ...

Page 6

... United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA40422218 -06-Aug.-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 ...

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