sqm40n10-30 Vishay, sqm40n10-30 Datasheet
sqm40n10-30
Related parts for sqm40n10-30
sqm40n10-30 Summary of contents
Page 1
... 0 ° ° stg SYMBOL c PCB Mount R thJA R thJC SQM40N10-30 Vishay Siliconix ® Power MOSFET d www.vishay.com/applications LIMIT UNIT 100 V ± 107 W 3. 175 °C LIMIT UNIT 40 °C/W 1 ...
Page 2
... SQM40N10-30 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
Page 3
... S09-1035-Rev. A, 08-Jun- °C, unless otherwise noted 0.08 0.06 25 °C 125 °C 0.04 0.02 0. 100 SQM40N10-30 Vishay Siliconix T = 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...
Page 4
... SQM40N10-30 Vishay Siliconix TYPICAL CHARACTERISTICS T 2 2.0 1.5 1.0 0.5 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature THERMAL RATINGS °C, unless otherwise noted 100 T - Case Temperature (°C) C Maximum Drain Current vs. Ambient Temperature www.vishay.com ° ...
Page 5
... C Single Pulse 0.1 0 100 V - Drain-to-Source Voltage ( minimum V at which DS(on) Safe Operating Area - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SQM40N10-30 Vishay Siliconix 10 µs 100 µ 100 ms, DC 1000 is specified -1 10 www.vishay.com 1 5 ...
Page 6
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...