upc8112t California Eastern Laboratories, upc8112t Datasheet
upc8112t
Manufacturer Part Number
upc8112t
Description
3 V Silicon Mmic L-band Frequency Down Converter
Manufacturer
California Eastern Laboratories
Datasheet
1.UPC8112T.pdf
(4 pages)
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DESCRIPTION
ELECTRICAL CHARACTERISTICS
• BROADBAND OPERATION:
• INPUT IP
• LOW VOLTAGE OPERATION: 2.7~3.3 V
• LOW CURRENT CONSUMPTION: 8.5 mA
• POWER SAVE FUNCTION
• SUPER SMALL T06 PACKAGE
• TAPE AND REEL PACKAGING OPTION AVAILABLE
The UPC8112T is a silicon Monolithic Microwave Integrated
Circuit which is manufactured using the NESAT III process.
The NESAT III process produces transistors with f
ing 20 GHz. This device consists of a double balance mixer, an
IF amplifier, and a LO buffer amplifier. The device was de-
signed to be used as the first down converter for GPS and
Notes:
1. External matching required.
FEATURES
SYMBOLS
I
RF Input: 800 - 2000 MHz
IF Output: 100 - 300 MHz
CC (PS)
LO
RF
P
f
P
LO
f
IIP
IFout
CG
I
RFin
NF
CC
SAT
1dB
RF
LO
IF
3
3
Circuit Current (no input signal)
Circuit Current at Power Save Mode, V
RF Frequency Response
IF Frequency Response
Conversion Gain
Single Side Band Noise Figure (SSB)
Output Power at 1 dB gain compression, f
Saturated Output Power
Input 3rd Order Intercept Point,
LO Leakage at RF pin, f
LO Leakage at IF pin, f
RF Leakage at LO Pin f
: -7 dBm
FREQUENCY DOWN CONVERTER
PARAMETERS AND CONDITIONS
PACKAGE OUTLINE
f
f
f
f
f
f
f
f
f
RFin
RFin
RFin
RFin
RFin
RFin
RFIN
RFin
RFin
f
f
f
f
f
f
RFin
RF
RF
RFin
RF
RFin
RF
PART NUMBER
RF
1
RF
in = 1.9 GHz, f
in = 900 MHz, f
in = 1.9 GHz, f
in = 1.9 GHz, f
in = 900 MHz, f
in = 900 MHz, f
= 900 MHz, f
= 1.5 GHz, f
= 1.9 GHz, f
= 900 MHz, f
= 1.5 GHz, f
= 1.9 GHz, f
= 1.5 GHz, f
= 1.9 GHz, f
= 900 MHz, f
= 1.5 GHz, f
= 1.5 GHz, f
= 1.5 GHz, f
f
f
(P
RFin
RFin
2. P
3 V SILICON MMIC L-BAND
RFin
RFin
= 900 MHz, f
= 1.9 GHz, f
= -10 dBm)
= -30 dBm
CC
LOin
LOin
LOin
LOin
LOin
LOin
LOin
LOin
LOin
LOin
LOin
T
LOIN
LO
LO
LO
(T
LO
LO
approach-
LO
= 3.0 V, V
f
in = 1.66 GHz
in = 1.66 GHz
in = 1.66 GHz
A
RFin
LOin
= 1.6 GHz
= 1.66 GHz
= 1.6 GHz
= 1.66 GHz
= 1.6 GHz
= 1.66 GHz
in = 1000 MHz
in = 1000 MHz
= 1.6 GHz
= 1.6 GHz
= 1.6 GHz
= 1000 MHz
= 1000 MHz
in = 1000 MHz
= 25 C, V
= 1000 MHz
LOin
LOin
= 1.9 GHz
= 1.66 GHz
= 1.66 GHz
= 1000 MHz
PS
2
CC
= 0.5 V
2
= V
2
PS
INTERNAL BLOCK DIAGRAM
wireless communications such as cellular, PCS, and 900 MHz
cordless phones. Operating on a 3 volt supply, this IC is ideally
suited for hand held portable designs.
NEC's stringent quality assurance and test procedures as-
sure the highest reliability and performance.
= 3.0 V, P
RF
Input
UNITS
MHz
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
GHz
dBm
mA
dB
dB
dB
dB
dB
dB
A
LOin
California Eastern Laboratories
= -10 dBm, Z
LO
Input
11.5
MIN
100
-6.5
4.9
0.8
9.5
-7
L
V
= Z
CC
S
= 50
UPC8112T
GND
UPC8112T
TYP
11.2
T06
250
-2.5
8.5
9.0
-10
-45
-46
-45
-32
-33
-30
-80
-57
-55
1.9
15
13
13
11
-3
-5
-9
-7
unless otherwise specified )
POWER
SAVE
IF
Output
MAX
11.7
17.5
15.5
13.2
300
0.1
2.0
11
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upc8112t Summary of contents
Page 1
... SUPER SMALL T06 PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION The UPC8112T is a silicon Monolithic Microwave Integrated Circuit which is manufactured using the NESAT III process. The NESAT III process produces transistors with f ing 20 GHz. This device consists of a double balance mixer amplifier, and a LO buffer amplifier ...
Page 2
ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Supply Voltage CC I Circuit Current Power Dissipation D T Operating Temperature OP T Storage Temperature STG Notes: 1. Operation in excess of any one of these parameters may result in ...
Page 3
TYPICAL APPLICATION EXAMPLE PCS or DIGITAL CELLULAR TEST CIRCUIT 50 50 PC8112T . . VCO N PLL 90 (TOP VIEW GND ...
Page 4
... DATA SUBJECT TO CHANGE WITHOUT NOTICE LEAD CONNECTIONS GND -0. +0. OUT 0.13 0.1 ORDERING INFORMATION (Units in mm) PART NUMBER UPC8112T- 0.5 MIN RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS (Top View) (Bottom View QTY 3K/Reel PRINTED IN USA ON RECYCLED PAPER -11/97 3 ...