ap4409gm ETC-unknow, ap4409gm Datasheet

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... Thermal Data Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S Parameter Parameter 3 AP4409GM Pb Free Plating Product BV -35V DSS R 10mΩ DS(ON) I -13A Rating Units -35 ±25 -13 -10.3 -50 2.5 0.02 W/℃ ...

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... AP4409GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

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... Fig 2. Typical Output Characteristics 1 1.4 V 1.2 1.0 0.8 0.6 -50 10 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.8 1.4 o =25 C 1.0 0.6 0.2 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4409GM -10V -7.0V -5.0V o -4. 150 -3 Drain-to-Source Voltage (V) DS =-13A =-10V 100 Junction Temperature ( 100 ...

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... AP4409GM -24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 120 ...