BU2727A Philips Semiconductors (Acquired by NXP), BU2727A Datasheet

no-image

BU2727A

Manufacturer Part Number
BU2727A
Description
BU2727A; Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors (Acquired by NXP)
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BU2727AW
Manufacturer:
IR
Quantity:
2 000
Philips Semiconductors
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection
circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand V
1700V.
QUICK REFERENCE DATA
PINNING - SOT93
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
ESD LIMITING VALUES
1 Turn-off current.
September 1997
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
t
SYMBOL
V
V
I
I
I
I
-I
-I
P
T
T
SYMBOL
V
C
CM
Csat
s
C
CM
B
BM
PIN
B(AV)
BM
stg
j
CESM
CEO
tot
CEsat
tab
CESM
CEO
tot
C
1
2
3
base
collector
emitter
collector
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Electrostatic discharge capacitor voltage Human body model (250 pF,
DESCRIPTION
PIN CONFIGURATION
1
tab
1
CONDITIONS
V
T
I
I
CONDITIONS
V
average over any 20 ms period
T
CONDITIONS
1.5 k )
C
CM
BE
mb
BE
mb
1
2
= 5.0 A; I
= 5.0 A; I
= 0 V
= 0 V
3
25 ˚C
25 ˚C
B
B(end)
= 0.91 A
= 0.9 A
SYMBOL
Preliminary specification
b
TYP.
MIN.
MIN.
5.0
2.2
-65
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
CES
pulses up to
MAX.
MAX.
MAX.
1700
e
1700
c
BU2727A
825
125
825
200
125
150
150
1.0
12
30
tbf
12
30
12
25
25
10
-
Rev 1.100
UNIT
UNIT
UNIT
mA
kV
W
W
˚C
˚C
V
V
A
A
V
A
V
V
A
A
A
A
A
s

Related parts for BU2727A

BU2727A Summary of contents

Page 1

... B(end) PIN CONFIGURATION tab CONDITIONS average over any 20 ms period ˚C mb CONDITIONS 1 Preliminary specification BU2727A pulses up to CES TYP. MAX. UNIT - 1700 V - 825 125 W - 1 2.2 tbf s SYMBOL ...

Page 2

... 180 0 B(end 0 (-dI / 50v 100-200R 250 Horizontal 200 Oscilloscope 100 Vertical Fig.2. Oscilloscope display for V CEOsust 2 Preliminary specification BU2727A TYP. MAX. UNIT - 1.0 K K/W MIN. TYP. MAX. UNIT - - 1 2 1.0 mA 7.5 13 825 ...

Page 3

... IBM 3 Preliminary specification BU2727A + 150 v nominal adjust for ICsat Lc LB T.U.T. Cfb Fig.5. Switching times test circuit. BU2727A/AF VCE = 5 V Tmb = 25 C Tmb = Fig.6. DC current gain Parameter T mb (Low and high gain) 100 Rev 1.100 ...

Page 4

... Fig.10. Normalised power dissipation BU2727A/ 0.1 0.01 0.001 10 100 Fig.11. Transient thermal impedance BU2727A/AF Tmb = 85 C Tmb = Preliminary specification BU2727A Normalised Power Derating PD 100 120 Tmb / C PD% = 100 PD/PD 25˚ Zth / (K/W) 0.5 0.2 0.1 0.05 0. ...

Page 5

... nF 0 B(end) September 1997 VCL 15 10 CFB 5 0 100 Fig.13. Reverse bias safe operating area 0 Preliminary specification BU2727A BU2727A/AF/D/DF Area where fails occur 1000 1700 VCE / jmax Rev 1.100 ...

Page 6

... Notes 1. Refer to mounting instructions for SOT93 envelope. 2. Epoxy meets UL94 V0 at 1/8". September 1997 15.2 max 14 13.6 2 max 4.25 4.15 2.2 max 0.5 min 5.5 1.15 0.95 11 Fig.14. SOT93; pin 2 connected to mounting base. 6 Preliminary specification BU2727A 4.6 max 2 4.4 21 max 12.7 max 13.6 min 0.5 0.4 M 1.6 Rev 1.100 ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 7 Preliminary specification BU2727A Rev 1.100 ...

Related keywords