tsc236 Taiwan Semiconductor Company, Ltd. (TSC), tsc236 Datasheet - Page 2

no-image

tsc236

Manufacturer Part Number
tsc236
Description
High Voltage Npn Transistor
Manufacturer
Taiwan Semiconductor Company, Ltd. (TSC)
Datasheet
Electrical Specifications
Note: pulse test: pulse width ≤ 300uS, duty cycle ≤ 2%
Parameter
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Dynamic
Frequency
Output Capacitance
Resistive Load
Turn On Time
Storage Time
Fall Time
(Ta = 25
o
C unless otherwise noted)
Conditions
I
I
I
V
V
V
I
I
I
I
V
V
V
V
V
I
Duty Cycle ≤1%
C
C
E
C
C
C
C
B1
CE
CB
EB
CE
CE
CE
CB
CC
=0.8A, I
=2.5A, I
=1A, I
=2.5A, I
=0.1mA, I
=1mA, I
=10mA, I
=I
=400V, I
=700V, I
= 9V, I
=5V, I
=5V, I
=10V, I
=10V, f =0.1MHz
=125V, I
B2
=0.4A, t
B
=0.2A
B
B
B
B
C
C
C
E
=0.1A
=0.6A
=0.5A
C
= 10mA
= 2.5A
=0
C
=0
B
E
C
=0
=0.5A
2/6
=0
=0
=0
=2A,
P
=25uS
Symbol
V
V
V
V
BV
BV
BV
High Voltage NPN Transistor
CE(SAT)1
CE(SAT)2
BE(SAT)1
BE(SAT)2
Cob
I
I
I
t
h
t
CEO
CBO
EBO
STG
f
ON
t
FE
CBO
CEO
EBO
T
f
Min
700
400
15
--
--
--
--
--
--
--
--
--
--
--
9
8
4
Typ
0.2
2.2
0.2
65
--
--
--
--
--
--
--
--
--
--
--
--
--
TSC236
Max
250
1.1
1.3
1.2
1.3
0.5
0.5
32
28
--
--
--
1
1
--
--
3
Version: A07
Unit
MHz
mA
mA
uA
uS
uS
uS
pF
V
V
V
V
V

Related parts for tsc236