VF20150C Vishay Intertechnology, VF20150C Datasheet

VF20150C

Manufacturer Part Number

VF20150C

Description

High-voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A

Manufacturer

Vishay Intertechnology

Datasheet

1.VF20150C.pdf (5 pages)

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Document Number: 89060

Revision: 19-May-08

PRIMARY CHARACTERISTICS

MAXIMUM RATINGS (T

PARAMETER

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (Fig. 1)

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min

Operating junction and storage temperature range

PIN 1

PIN 3

VB20150SG

V20150SG

TO-220AB

TO-263AB

at I

F(AV)

FSM

High-Voltage Trench MOS Barrier Schottky Rectifier

RRM

max.

= 20 A

HEATSINK

CASE

PIN 2

TMBS

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

For technical questions within your region, please contact one of the following:

V20150SG, VF20150SG, VB20150SG & VI20150SG

= 25 °C unless otherwise noted)

PIN 1

PIN 3

PIN 1

PIN 3

VF20150SG

Ultra Low V

VI20150SG

ITO-220AB

150 °C

TO-262AA

0.77 V

150 V

140 A

20 A

SYMBOL

PIN 2

F(AV)

, T

PIN 2

FSM

RRM

STG

= 0.57 V at I

V20150SG

FEATURES

TYPICAL APPLICATIONS

For use in high frequency inverters, switching power

supplies, freewheeling diodes, OR-ing diode, dc-to-dc

converters and reverse battery protection.

MECHANICAL DATA

Case:

TO-262AA

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

• Trench MOS Schottky technology

• Low forward voltage drop, low power

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum

• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB

• Component in accordance to RoHS 2002/95/EC

losses

peak of 245 °C (for TO-263AB package)

and TO-262AA package)

and WEEE 2002/96/EC

VF20150SG

TO-220AB,

= 5 A

Vishay General Semiconductor

- 55 to + 150

1500

150

140

VB20150SG

ITO-220AB,

VI20150SG

TO-263AB

www.vishay.com

UNIT

°C

and

Related parts for VF20150C

VF20150C Summary of contents

Page 1

V20150SG, VF20150SG, VB20150SG & VI20150SG High-Voltage Trench MOS Barrier Schottky Rectifier ® TMBS TO-220AB V20150SG PIN 1 PIN 2 CASE PIN 3 TO-263AB VB20150SG HEATSINK PRIMARY CHARACTERISTICS I F(AV) V ...

Page 2

V20150SG, VF20150SG, VB20150SG & VI20150SG Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER Breakdown voltage (1) Instantaneous forward voltage (2) Reverse current Notes: (1) Pulse test: 300 µs pulse width duty cycle (2) Pulse test: Pulse width ≤ 40 ...

Page 3

V20150SG, VF20150SG, VB20150SG & VI20150SG 100 T = 150 ° 125 ° 100 ° °C A 0.1 0 0.2 0.4 0.6 0.8 1.0 Instantaneous Forward Voltage (V) Figure ...

Page 4

V20150SG, VF20150SG, VB20150SG & VI20150SG Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.154 (3.91) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) PIN 0.350 ...

Page 5

... All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. ...

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