ncn6010 ON Semiconductor, ncn6010 Datasheet

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ncn6010

Manufacturer Part Number
ncn6010
Description
Sim Card Supply And Level Shifter
Manufacturer
ON Semiconductor
Datasheet

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NCN6010
SIM Card Supply and
Level Shifter
the voltages between a SIM Card and an external microcontroller. A
built-in DC-DC converter makes the NCN6010 useable to drive any
type of SIM card. The device fulfills the GSM 11.11 specification. The
external MPU has an access to a dedicated input STOP pin, providing
a way to switch off the power applied to the SIM card in case of failure
or when the card is removed.
Features
Typical Applications
**For additional information on our Pb-Free strategy and soldering details,
© Semiconductor Components Industries, LLC, 2007
May, 2007 - Rev. 3
please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
The NCN6010 is a level shifter analog circuit designed to translate
Supports 3.0 V or 5.0 V Operating SIM Card
Built-in Pull Up Resistor for I/O Pin in Both Directions
All Pins are Fully ESD Protected, According to GSM Specification
Supports 10 MHz Clock
6.0 kV ESD Proof on SIM Card Pins
These are Pb-Free Devices**
Cellular Phone SIM Interface
Identification Module
V
GND
CC
GND
V
DD
P4
P3
P2
P1
P0
C4
4.7
mF
Figure 1. Typical Interface Application
1
2
3
4
5
6
7
STOP
MOD_V
PWR_ON
I/O
CLOCK
RESET
V
DD
CC
SIM_RST
SIM_V
SIM_CLK
SIM_IO
GND
Cta
Ctb
CC
14
13
12
10
11
9
8
8
C2
220 nF
4
3
7
2
6
1 mF
C3
1
1
5
GND
GND
10
9
†For information on tape and reel specifications,
*This package is inherently Pb-Free.
NCN6010DTB
NCN6010DTBG
NCN6010DTBR2
NCN6010DTBR2G TSSOP-14* 2500/Tape & Reel
MOD_VCC
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
PWR_ON
Device
CLOCK
RESET
(Note: Microdot may be in either location)
STOP
DTB SUFFIX
CASE 948G
V
TSSOP-14
I/O
DD
ORDERING INFORMATION
A
L
Y
W
G
1
2
3
4
5
6
7
1
PIN CONNECTIONS
http://onsemi.com
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb-Free Package
TSSOP-14*
TSSOP-14* 2500/Tape & Reel
TSSOP-14*
(Top View)
Package
Publication Order Number:
14
14
13
12
11 SIM_IO
10
1
96 Units / Rail
96 Units / Rail
9
8
MARKING
DIAGRAM
Shipping
SIM_VCC
Cta
Ctb
GND
SIM_CLK
SIM_RST
NCN6010/D
ALYWG
6010
NCN
G

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ncn6010 Summary of contents

Page 1

... NCN6010 SIM Card Supply and Level Shifter The NCN6010 is a level shifter analog circuit designed to translate the voltages between a SIM Card and an external microcontroller. A built-in DC-DC converter makes the NCN6010 useable to drive any type of SIM card. The device fulfills the GSM 11.11 specification. The ...

Page 2

... STOP 2 ENABLE MOD_V 3 V POWER UNIT & LOGIC PWR_ON CLOCK 6 RESET DATA I/O 5 Figure 2. NCN6010 Block Diagram NCN6010 MANAGEMENT GND GND V CC GND I/O DATA I/O GND GND http://onsemi.com 2 SIM_V 14 CC Cta 13 Ctb 12 9 SIM_CLK 8 SIM_RST SIM_IO 11 10 GROUND ...

Page 3

... Ctb POWER 14 SIM_VCC POWER NCN6010 Description This pin is connected to the system controller power supply suitable to operate from a 3.6 V typical battery. A low ESR ceramic capacitor (4.7 mF typical) shall be used to bypass the power supply voltage. A Low level on this pin resets the SIM interface, switching off the SIM_VCC, according to the ISO7816-3 Power Down procedure (See Table 1 and Figure 3) ...

Page 4

... Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Maximum electrical ratings are defined as those values beyond which damage to the device may occur at T NCN6010 Symbol V DD SIM_VCC -0 ...

Page 5

... 350 ms delay must be observed by the external MPU prior to reactivate the SIM_VCC output. 4. Using low ESR capacitors type (max 100 mW) is mandatory for Ct, Cout1 and Cout2 to reach the NCN6010 specifications. Ceramic type (X5R or X7R) are recommended. DIGITAL INPUT SECTION CLOCK, RESET, I/O, STOP, MOD_VCC, PWR_ON ...

Page 6

... The SIM_CLK clock can operate MHz, but the rise and fall time are not guaranteed to be fully within the ISO7816 specification over the temperature range. Typically, tr and tf are CRD_CLK = 10 MHz. 7. Digital inputs undershoot t -0.30 V, Digital inputs overshoot t 0.30 V. NCN6010 Symbol Pin ...

Page 7

... Operation Mode The SIM card supply is disabled, the SIM_VCC pin is Open, SIM_RST = L, SIM_I SIM_CLK = L The NCN6010 is in the power down mode. The SIM card supply is disabled, SIM_VCC = Open, SIM_RST = L, SIM_CLK = L, SIM_IO = L. The SIM_VCC voltage is programmed to 5.0 V. The NCN6010 is in the power down mode. The SIM card supply is disabled, SIM_VCC = Open, SIM_RST = L, SIM_CLK = L, SIM_IO = L ...

Page 8

... I/O session is terminated immediately, according to the ISO7816-3 sequence as depicted in Figure 4. When the PWR_ON signal is set Low, the NCN6010 goes to the power down mode. According to the ISO7816-3 procedure defined to deactivate the SIM contacts, the input pins I/O, CLOCK and RESET must be Low before the PWR_ON is taken Low. When the ...

Page 9

... During this period, the PMOS devices are not activated since the input voltage is below their Vgs threshold. When the input slope NCN6010 Figure 5. Power Down Sequence Oscillogram The bi-directional I/O line provides a way to automatically adapt the voltage difference between the mCU and the SIM card ...

Page 10

... Figure 7. SIM_IO Rise and Fall Time Oscillogram Input Schmitt Triggers All the Logic Input pins have built-in Schmitt trigger circuits to prevent the NCN6010 against uncontrolled operation. The typical dynamic characteristics of the related pins are depicted in Figure 8. The output signal is guaranteed to go High when the input voltage is above 0 ...

Page 11

... MOD_V CC When the NCN6010 is programmed in the 5.0 V output voltage, the clocks are activated, switch S5 is disconnected and the output voltage is the result of the C1 charge transfer into the output load. The current is limited by three mains parameters: - the Ron of the switching MOS (S1 through S4) ...

Page 12

... NCN6010. Moreover, with ESR in the 3.0 Ohm range, low cost capacitors are not suitable for this application. Figure 11 provides the schematic diagram of the simulated charge pump circuit ...

Page 13

... Load = 10 mA 4 V(C2:2) 2 SEL>> -2 I(R4) Figure 12. Simulated Charge Pump Typical Waveforms Figure 13. SIM_VCC Output Voltage Ripple @ Iout = 10 mA NCN6010 capacitor. The real ripple voltage, coming from the engineering board, is given in Figure 13. Charge Pump Transfer Capacitor Current 20 TIME (ms) http://onsemi.com ...

Page 14

... NCN6010 ISO7816 http://onsemi.com 14 ...

Page 15

... Figure 16 represents a typical printed circuit lay out, based on the schematic diagram given in Figure 14, highlighting the large ground plane used in this engineering tool. NCN6010 Obviously, a GSM application will use much less area, but cares must be observed to locate the capacitors as close as possible to the integrated circuit associated pins. ...

Page 16

... PLANE 14X 0.36 The product described herein (NCN6010), may be covered by the following U.S. patents: 6,424,203. There may be other patents pending. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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