ncn4555 ON Semiconductor, ncn4555 Datasheet
ncn4555
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ncn4555 Summary of contents
Page 1
... NCN4555 1. SIM Card Power Supply and Level Shifter The NCN4555 is a level shifter analog circuit designed to translate the voltages between a SIM Card and an external microcontroller or MPU. A built−in LDO−type DC−DC converter makes the NCN4555 useable to drive 1.8 V and 3.0 V SIM card. The device fulfills the ISO7816− ...
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... Figure 2. QFN−16 Pinout (Top View) STOP 1 MOD_V (1 5.5 V) RST 14 CLK 13 GND 18 kW I/O 15 DATA Figure 3. NCN4555 Block Diagram http://onsemi.com NCN4555 NC I/O RST CLK Exposed Pad (EP SIM_CLK NCN4555 GND 10 SIM_RST ...
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... V POWER This pin is connected to the system controller power supply. It configures the level shifter input DD stage to accept the signals coming from the microprocessor. A 0.1 mF capacitor shall be used to bypass the power supply voltage. When V NCN4555 comes into a shutdown mode Connect 5 V POWER DC− ...
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... Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 5. Maximum electrical ratings are defined as those values beyond which damage to the device may occur at T NCN4555 Characteristics Oxygen Index Symbol ...
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... Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. NCN4555 Rating = 0 mA (Note 6) ...
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... Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 9. All the dynamic specifications (AC specifications) are guaranteed by design over the operating temperature range. NCN4555 Rating = High − ...
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... Temperature at SIM_V = 1.8 V (MOD_V 3.3 V BAT 5.5 V BAT −50 −30 − TEMPERATURE (°C) Figure temperature at 3.0 V BAT NCN4555 TYPICAL CHARACTERISTICS 100 −50 −30 _SC vs Figure 5. Short Circuit Current LOW) Temperature at SIM_V ...
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... The shutdown mode power consumption is typically in the range of a few tens of nA (30 nA Typical). Figure 8 shows a simplified view of the NCN4555 voltage regulator. The SIM_V output is internally current limited and protected against short circuits. The short−circuit current IV over the temperature and SIM_V ...
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... Digital Input Table on page 5). SHUTDOWN OPERATING In order to save power or for other purpose required by the application it is possible to put the NCN4555 in a shutdown mode by setting Low the pin STOP. On the other hand the device enters automatically in a shutdown mode when V becomes lower than 1 ...
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... NCN4555 EVALUATION BOARD AND PCB GUIDELINES MBRA140T3 GND GND GND Figure 12. NCN4555 engineering test board schematic diagram http://onsemi.com 10 2 SENSE_SIM_V CC 100 nF C1 GND MBRA140T3 MOD_V CC S2 STOP GND GND ...
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... NCN4555 EVALUATION BOARD AND PCB GUIDELINES Top Layer Bottom Layer Figure 13. NCN4555 Printed Circuit Board Layout (Engineering board) http://onsemi.com 11 ...
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... SPACING BETWEEN LEAD TIP AND FLAG. MILLIMETERS DIM MIN MAX A 0.70 0.80 A1 0.00 0.05 A3 0.20 REF b 0.18 0.30 D 3.00 BSC D2 1.65 1.85 E 3.00 BSC E2 1.65 1.85 e 0.50 BSC K 0.20 −−− L 0.30 0.50 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NCN4555/D ...