stm6967 SamHop Microelectronics Corp., stm6967 Datasheet

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stm6967

Manufacturer Part Number
stm6967
Description
P-channel Enhancement Mode Field Effect Transistor
Manufacturer
SamHop Microelectronics Corp.
Datasheet

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Part Number:
STM6967
Manufacturer:
ST
0
P-Channel Enhancement Mode Field Effect Transistor
Details are subject to change without notice.
Symbol
V
V
I
I
E
ABSOLUTE MAXIMUM RATINGS ( T
P
T
THERMAL CHARACTERISTICS
R
D
DM
S mHop Microelectronics C orp.
J ,
DS
GS
AS
D
a
PRODUCT SUMMARY
T
JA
V
STG
-60V
DSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage
Temperature Range
Thermal Resistance, Junction-to-Ambient
-4A
I
D
S O-8
R
125 @ VGS=-4.5V
-Pulsed
86 @ VGS=-10V
DS(ON)
b
(m
1
a
) Max
A
=25 ° C unless otherwise noted )
a
d
T
T
T
T
A
A
A
A
=25 ° C
=70 ° C
=25 ° C
=70 ° C
FEATURES
a
Super high dense cell design for low R
Rugged and reliable.
Suface Mount Package.
1
D
D
D
D
5
6
7
8
Green
Product
STM6967
-55 to 150
Limit
-3.2
4
3
2
1
±20
-60
-22
1.6
2.5
-4
49
50
G
S
S
S
www.samhop.com.tw
DS(ON)
.
Apr,28,2010
Units
°C/W
mJ
°C
Ver 1.0
W
W
V
V
A
A
A

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stm6967 Summary of contents

Page 1

... Rugged and reliable. Suface Mount Package =25 ° C unless otherwise noted ) A =25 ° =70 ° =25 ° =70 ° STM6967 Green Product . DS(ON Limit -60 ±20 -4 -3.2 -22 49 2.5 1.6 -55 to 150 50 www ...

Page 2

... STM6967 ELECTRICAL CHARACTERISTICS Parameter Symbol OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS Zero Gate Voltage Drain Current I DSS Gate-Body Leakage Current I GSS ON CHARACTERISTICS Gate Threshold Voltage V GS(th) R Drain-Source On-State Resistance DS(ON) g Forward Transconductance FS DYNAMIC CHARACTERISTICS C Input Capacitance ISS Output Capacitance C OSS Reverse Transfer Capacitance ...

Page 3

... STM6967 0 Drain-to-Source Voltage(V) DS Figure 1. Output Characteristics 180 150 120 Drain Current(A) D Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 - Tj, Junction Temperature( ° Figure 5. Gate Threshold Variation with Temperature 1 ...

Page 4

... STM6967 240 200 160 120 Gate-to-Source Voltage(V) GS Figure 7. On-Resistance vs. Gate-Source Voltage 1800 1500 Ciss 1200 900 600 300 Coss Crss Drain-to-Source Voltage(V) DS Figure 9. Capacitance 100 60 10 VDS=-15V,ID=-1A VGS=-10V Rg, Gate Resistance( Figure 11 ...

Page 5

... STM6967 20V 0 Inductive Te t Circuit Unclamped F igure 13a. 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 0.00001 0.0001 Figure 14. Normalized Thermal Transient Impedance Curve + 0.001 0.01 0.1 Square Wave Pulse Duration(sec Unclamped Inductive W ave F igure 13b ...

Page 6

... STM6967 PACKAGE OUTLINE DIMENSIONS SO 0.015X45 e 0.05 TYP OLS 0.008 TYP. B 0.016 TYP. MILLIME MIN MAX 1.75 1.35 0.25 0.10 4.98 4.80 3.81 3.99 5.79 6.20 0.41 1. INC HE S MIN MAX 0.053 0.069 0.004 0.010 0.189 0.196 0.157 0.150 0.228 0.244 0.016 0.050 8 0 www.samhop.com.tw Ver 1 ...

Page 7

... STM6967 SO-8 Carrier Tape D1 A0 SECTION A-A unit PACKAGE SOP 8N 6.50 5.25 0.15 150 0.10 SO-8 Reel UNIT: TAPE SIZE REEL SIZE 12 330 SO-8 Tape and Reel Data TERMINAL NUMBER FEEDING DIRECTION 12.0 2.10 1.5 1.55 1.75 +0.3 (MIN) 0.10 0.10 0. 330 62 12.4 16.8 12.75 1 0 5.5 8.0 2.0 0.30 4.0 0.10 0.10 0.013 ...

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