si7668dp Vishay, si7668dp Datasheet

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si7668dp

Manufacturer Part Number
si7668dp
Description
N-channel Reduced Qg, Fast Switching Wfet
Manufacturer
Vishay
Datasheet
Notes
a.
Document Number: 72752
S-40274—Rev. A, 23-Feb-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)
Avalanche Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
30
30
(V)
J
ti
Ordering Information: Si7668DP-T1—E3 (lLead Free)
t A bi
N-Channel Reduced Q
8
6.15 mm
D
J
J
a
a
0.0036 @ V
0.0032 @ V
= 150_C)
= 150_C)
t
a
a
7
D
Parameter
Parameter
r
DS(on)
6
D
PowerPAK SO-8
a
a
GS
Bottom View
GS
5
(W)
D
= 4.5 V
= 10 V
a
1
S
2
S
3
A
S
5.15 mm
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
L = 0.1 mH
T
T
T
T
t v 10 sec
4
A
A
A
A
G
I
= 25_C
= 70_C
= 25_C
= 70_C
D
30
27
(A)
g
, Fast Switching WFETr
Symbol
Symbol
T
R
R
R
V
J
V
I
I
P
P
DM
, T
thJC
I
I
I
AS
thJA
DS
GS
D
D
S
D
D
stg
FEATURES
D Extremely Low Q
D Q
D TrenchFETr Gen II Power MOSFET
D 100% R
APPLICATIONS
D Low-Side DC/DC Conversion
D Fixed Telecom
Switching Losses Improvement
Limiting
− Notebook, Server, VRM Module
10 secs
sd
Typical
/Q
G
4.5
5.4
3.4
1.0
30
25
18
50
gs
N-Channel MOSFET
g
Ratio of 0.37 per Shoot-Through
Tested
−55 to 150
"12
30
70
50
D
S
Steady State
gd
Maximum
WFET Technology for
Vishay Siliconix
1.8
1.9
1.2
1.5
18
15
23
65
Si7668DP
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
1

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si7668dp Summary of contents

Page 1

... PowerPAK SO-8 6. Bottom View Ordering Information: Si7668DP-T1—E3 (lLead Free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction) ...

Page 2

... Si7668DP Vishay Siliconix MOSFET SPECIFICATIONS (T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Document Number: 72752 S-40274—Rev. A, 23-Feb-04 10000 8000 6000 4000 2000 0.010 0.008 0.006 T = 25_C J 0.004 0.002 0.000 0.8 1.0 1.2 Si7668DP Vishay Siliconix Capacitance C iss C oss C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 1 ...

Page 4

... Si7668DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0 250 mA D 0.2 −0.0 −0.2 −0.4 −0.6 −0.8 −50 − − Temperature (_C) J Limited by r Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − www.vishay.com ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 −4 − Document Number: 72752 S-40274—Rev. A, 23-Feb-04 −2 − Square Wave Pulse Duration (sec) Si7668DP Vishay Siliconix 1 10 www.vishay.com 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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