stm101n SamHop Microelectronics Corp., stm101n Datasheet

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stm101n

Manufacturer Part Number
stm101n
Description
N-channel Enhancement Mode Field Effect Transistor
Manufacturer
SamHop Microelectronics Corp.
Datasheet

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Part Number:
STM101N
Manufacturer:
ST
0
Symbol
V
V
I
I
E
P
Details are subject to change without notice.
ABSOLUTE MAXIMUM RATINGS ( T
T
THERMAL CHARACTERISTICS
R
N-Channel Enhancement Mode Field Effect Transistor
D
DM
S mHop Microelectronics C orp.
J ,
DS
GS
AS
D
a
PRODUCT SUMMARY
T
V
JA
100V
STG
DSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Thermal Resistance, Junction-to-Ambient
Maximum Power Dissipation
Operating Junction and Storage
Temperature Range
Sigle Pulse Avalanche Energy
3A
I
D
S O-8
R
-Pulsed
170 @ VGS=10V
260 @ VGS=4.5V
DS(ON)
b
1
(m
a
) Typ
A
a
=25 ° C unless otherwise noted )
d
T
T
T
T
A
A
A
A
=25 ° C
=70 ° C
=70 ° C
=25 ° C
FEATURES
a
Super high dense cell design for low R
Rugged and reliable.
Suface Mount Package.
1
Green
Product
STM101N
-55 to 150
Limit
100
±20
2.4
2.3
2.8
1.8
15
44
3
www.samhop.com.tw
DS(ON)
.
Oct,08,2010
Units
°C/W
mJ
°C
W
W
V
V
A
A
A
Ver1.0

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stm101n Summary of contents

Page 1

... Typ Rugged and reliable. Suface Mount Package. 1 =25 ° C unless otherwise noted ) A =25 ° =70 ° =25 ° =70 ° STM101N Green Product . DS(ON) Limit 100 ±20 3 2.4 15 2.3 2.8 1.8 -55 to 150 44 www.samhop.com.tw Ver1.0 Units ...

Page 2

... STM101N ELECTRICAL CHARACTERISTICS Parameter Symbol OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS Zero Gate Voltage Drain Current I DSS Gate-Body Leakage Current I GSS ON CHARACTERISTICS Gate Threshold Voltage V GS(th) R Drain-Source On-State Resistance DS(ON) g Forward Transconductance FS DYNAMIC CHARACTERISTICS C Input Capacitance ISS Output Capacitance C OSS Reverse Transfer Capacitance ...

Page 3

... STM101N 0.5 1.0 1 Drain-to-Source Voltage(V) DS Figure 1. Output Characteristics 360 300 240 180 120 Drain Current(A) D Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 - Tj, Junction Temperature( ° Figure 5. Gate Threshold Variation with Temperature ...

Page 4

... STM101N 600 500 400 300 200 100 Gate-to-Source Voltage(V) GS Figure 7. On-Resistance vs. Gate-Source Voltage 420 350 Ciss 280 210 140 Coss 70 Crss Drain-to-Source Voltage(V) DS Figure 9. Capacitance 100 10 1 VDS=50V,ID=1A VGS=10V 0.1 1 Rg, Gate Resistance( Figure 11. switching characteristics I =1 ...

Page 5

... STM101N 20V 0 Inductive Te t Circuit Unclamped F igure 13a. 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 0.0000 1 0.000 1 Figure 14. Normalized Thermal Transient Impedance Curve + 0.001 0. Square Wave Pulse Duration(sec Unclamped Inductive W ave F igure 13b ...

Page 6

... STM101N PACKAGE OUTLINE DIMENSIONS SO-8 1 SYMBOLS MILLIMETERS MIN MAX 1.75 1.35 0.25 0.10 1.63 1.25 0.31 0.51 0.17 0.25 4.80 5.00 3.70 4.00 1.27 REF. 5.80 6.20 0.40 1. 0.25 0. INCHES MIN MAX 0.053 0.069 0.004 0.010 0.064 0.049 0.012 0.020 0.007 0.010 0.197 0.189 0.146 0.157 0.050 BSC ...

Page 7

... STM101N SO-8 Carrier Tape D1 A0 SECTION A-A unit PACKAGE SOP 8N 6.50 5.25 0.15 150 0.10 SO-8 Reel UNIT: REEL SIZE TAPE SIZE 12 330 SO-8 Tape and Reel Data TERMINAL NUMBER FEEDING DIRECTION 12.0 2.10 1.5 1.55 1.75 +0.3 (MIN) 0.10 0.10 0. 330 62 12.4 16.8 12.75 1 1.5 + 0.2 - 0 5.5 8.0 2.0 0.30 4.0 0.10 0.10 0.10 0.013 0. 2.0 0.15 www.samhop.com.tw Ver1 ...

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