si7149dp Vishay, si7149dp Datasheet - Page 4

• Manufacturer Part Number: si7149dp
• Description: P-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Si7149DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.2
- 0.4
0.01
100
0.8
0.6
0.4
0.2
0.0
0.1
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
T
0.2
J
= 150 °C
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
0.4
J
25
- Temperature (°C)
0.6
I
50
D
= 250 µA
75
T
J
0.8
0.01
100
= 25 °C
0.1
10
1
0.01
100
Limited by R
* V
I
1.0
D
Single Pulse
T
GS
= 1 mA
125
A
= 25 °C
> minimum V
V
New Product
DS
0.1
1.2
150
DS(on)
- Drain-to-Source Voltage (V)
Safe Operating Area
*
GS
at which R
BVDSS Limited
1
DS(on)
0.05
0.04
0.03
0.02
0.01
0.00
200
160
120
10
80
40
0
0
is specified
0 .
0
0
On-Resistance vs. Gate-to-Source Voltage
1
Single Pulse Power, Junction-to-Ambient
1
1 ms
10 ms
100 ms
1 s
10 s
DC
2
100
V
0.01
GS
- Gate-to-Source Voltage (V)
3
4
Time (s)
0.1
T
5
J
S-82620-Rev. A, 03-Nov-08
= 25 °C
Document Number: 68934
6
7
1
I
D
T
J
= 15 A
8
= 125 °C
9
1
10
0