si7336dp-t1 Vishay, si7336dp-t1 Datasheet

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si7336dp-t1

Manufacturer Part Number
si7336dp-t1
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
SI7336DP-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
si7336dp-t1-E3
Manufacturer:
SHARP
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Part Number:
si7336dp-t1-GE3
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VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 72415
S-41795—Rev. C, 04-Oct-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)
Avalanche Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction to Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
DS
30
30
(V)
0.00325 @ V
0.0042 @ V
r
DS(on)
8
Ordering Information: Si7336DP-T1
6.15 mm
D
J
J
a
a
= 150_C)
= 150_C)
a
a
7
GS
GS
D
Parameter
Parameter
(W)
= 4.5 V
= 10 V
6
D
PowerPAK SO-8
a
a
Bottom View
5
N-Channel 30-V (D-S) MOSFET
D
a
I
1
D
30
27
S
(A)
2
S
3
A
S
5.15 mm
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
L = 1.0 mH
Q
T
T
T
T
t v 10 sec
4
A
A
A
A
g
G
= 25_C
= 70_C
= 25_C
= 70_C
36
36
(Typ)
Symbol
Symbol
T
R
R
R
V
J
V
I
I
P
P
DM
, T
thJC
I
I
I
AS
thJA
DS
GS
D
D
S
D
D
stg
FEATURES
D Ultra-Low On-Resistance Using High Density
D Q
D New Low Thermal Resistance PowerPAKr Package
D 100% R
APPLICATIONS
D Low-Side DC/DC Conversion
D Synchronous Rectifier, POL
TrenchFETr Gen II Power MOSFET Technology
with Low 1.07-mm Profile
ï Notebook
ï Server
ï Workstation
g
Optimized
G
10 secs
Typical
N-Channel MOSFET
g
4.5
5.4
3.4
1.0
30
25
18
50
Tested
ï55 to 150
D
S
"20
30
70
50
Steady State
Maximum
Vishay Siliconix
1.8
1.9
1.2
1.5
18
15
23
65
Si7336DP
www.vishay.com
Unit
Unit
_C/W
_C
W
W
V
V
A
1

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si7336dp-t1 Summary of contents

Page 1

... PowerPAK SO-8 6. Bottom View Ordering Information: Si7336DP-T1 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction) ...

Page 2

... Si7336DP Vishay Siliconix MOSFET SPECIFICATIONS (T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Input Capacitance Output Capacitance ...

Page 3

... S-41795—Rev. C, 04-Oct-04 7000 6000 5000 4000 3000 2000 1000 0.015 0.012 0.009 0.006 T = 25_C J 0.003 0.000 0.8 1.0 1.2 Si7336DP Vishay Siliconix Capacitance C iss C oss C rss ï Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 1.4 1.2 1.0 0.8 0.6 ï ...

Page 4

... Si7336DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0 250 mA 0.2 D ï0.0 ï0.2 ï0.4 ï0.6 ï0.8 ï1.0 ï50 ï ï Temperature (_C) J Limited by r Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 ï4 ï www ...

Page 5

... Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72415. Document Number: 72415 S-41795—Rev. C, 04-Oct-04 ï2 ï Square Wave Pulse Duration (sec) Si7336DP Vishay Siliconix 1 10 www.vishay.com 5 ...

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