si7322dn Vishay, si7322dn Datasheet

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si7322dn

Manufacturer Part Number
si7322dn
Description
N-channel 100-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
si7322dn-T1-E
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
si7322dn-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
si7322dn-T1-GE3
0
Company:
Part Number:
si7322dn-T1-GE3
Quantity:
5 000
Company:
Part Number:
si7322dn-T1-GE3
Quantity:
5 000
Document Number: 69638
S-72512-Rev. A, 03-Dec-07
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 81 °C/W.
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
DS
100
(V)
Ordering Information: Si7322DN-T1-E3 (Lead (Pb)-free)
8
3.30 mm
D
7
0.058 at V
D
6
PowerPAK
r
http://www.vishay.com/ppg?73257
DS(on)
D
5
Bottom View
GS
D
(Ω)
J
= 10 V
= 150 °C)
b, f
®
1
1212-8
N-Channel 100-V (D-S) MOSFET
S
2
S
3
I
D
S
18
3.30 mm
(A)
Steady State
4
G
a
d, e
t ≤ 10 s
T
T
T
L = 0.1 mH
T
T
T
T
T
T
T
). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
13 nC
g
(Typ)
New Product
Symbol
R
R
thJC
thJA
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
AS
D
S
D
FEATURES
APPLICATIONS
stg
• TrenchFET
• 100 % UIS Tested
• Primary Switch
• Isolated DC/DC Converters
Typical
1.9
26
®
Power MOSFET
G
- 55 to 150
N-Channel MOSFET
5.5
4.4
3.2
3.8
2.4
Limit
± 20
100
260
18
16
18
20
19
18
52
33
b, c
b, c
b, c
b, c
b, c
a
a
a
D
S
Maximum
2.4
33
Vishay Siliconix
Si7322DN
www.vishay.com
°C/W
Unit
Unit
RoHS
COMPLIANT
mJ
°C
W
V
A
1

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si7322dn Summary of contents

Page 1

... Bottom View Ordering Information: Si7322DN-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation ...

Page 2

... Si7322DN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... 2.0 2.5 3.0 1000 800 600 400 200 2.2 2.0 1.8 1.6 1 1.2 1.0 0.8 0.6 0 Si7322DN Vishay Siliconix ° 125 ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss ...

Page 4

... Si7322DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 3.8 3 250 µA D 3.0 2.6 2.2 1 Temperature (°C) J Threshold Voltage 0.001 www.vishay.com 4 New Product 0.16 0.12 0.08 0. °C J 0.8 1.0 1 100 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69638 S-72512-Rev. A, 03-Dec-07 New Product 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si7322DN Vishay Siliconix 100 125 T - Case Temperature (°C) C Power Derating www.vishay.com 150 5 ...

Page 6

... Si7322DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 7

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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