si7326dn Vishay, si7326dn Datasheet

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si7326dn

Manufacturer Part Number
si7326dn
Description
N-channel 30-v D-s Mosfet Fast Switching Mosfet
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
si7326dn-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
si7326dn-T1-E3
Quantity:
1 380
Part Number:
si7326dn-T1-GE3
Manufacturer:
VISHAY
Quantity:
8 000
Part Number:
si7326dn-T1-GE3
Manufacturer:
VISHAY
Quantity:
300
Part Number:
si7326dn-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
b. See Solder Profile (
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 74444
S-62439-Rev. A, 27-Nov-06
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
DS
30
Ordering Information: Si7326DN-T1-E3 (Lead (Pb)-free)
(V)
8
3.30 mm
D
7
D
h
N-Channel 30-V (D-S) Fast Switching MOSFET
ttp://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
0.0195 at V
6
0.030 at V
PowerPAK 1212-8
D
5
r
Bottom View
DS(on)
D
J
a
= 150 °C)
a
GS
GS
(Ω)
1
= 4.5 V
= 10 V
S
2
a
S
3
S
3.30 mm
4
a
G
b, c
A
I
D
10
= 25 °C, unless otherwise noted
Steady State
Steady State
8
(A)
L = 0.1 mH
T
T
T
T
t ≤ 10 sec
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• TrenchFET
• New Low Thermal Resistance PowerPAK
• 100 % R
• DC/DC Conversion
G
Symbol
Symbol
T
R
R
J
Package with Low 1.07 mm Profile
V
V
E
I
I
P
, T
N-Channel MOSFET
I
DM
thJA
thJC
I
AS
DS
GS
AS
D
S
D
stg
g
D
S
Tested
®
Power MOSFET
Typical
10 sec
7.5
2.9
3.5
1.9
4.5
10
28
65
- 55 to 150
± 20
260
30
40
15
11
Steady State
Maximum
6.5
5.0
1.2
1.5
0.8
6.0
35
81
Vishay Siliconix
Si7326DN
www.vishay.com
®
°C/W
Unit
Unit
mJ
°C
W
V
A
RoHS
COMPLIANT
1

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si7326dn Summary of contents

Page 1

... S 3. Bottom View Ordering Information: Si7326DN-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Pulse Avalanche Current Avalanche Energy a Maximum Power Dissipation ...

Page 2

... Si7326DN Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time ...

Page 3

... Source-Drain Diode Forward Voltage Document Number: 74444 S-62439-Rev. A, 27-Nov-06 1200 1000 800 600 400 200 0.06 0.05 0.04 0.03 0.02 0. °C J 0.00 0.8 1.0 1.2 Si7326DN Vishay Siliconix C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 1.6 1.4 1.2 1.0 0.8 0 ...

Page 4

... Si7326DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0.2 I 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 = 250 µ 100 125 150 100 *Limited by r DS(on 0 °C C Single Pulse 0.01 0 Drain-to-Source Voltage (V) ...

Page 5

... Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74444. Document Number: 74444 S-62439-Rev. A, 27-Nov- Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Si7326DN Vishay Siliconix - www.vishay.com 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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