si7358adp-t1 Vishay, si7358adp-t1 Datasheet

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si7358adp-t1

Manufacturer Part Number
si7358adp-t1
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Notes
a.
Document Number: 73161
S-41959—Rev. A, 25-Oct-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)
Avalanche Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
30
30
(V)
J
8
ti
Ordering Information: Si7358ADP-T1
6.15 mm
D
0.0059 @ V
0.0042 @ V
t A bi
7
D
r
DS(on)
6
D
J
J
a
a
PowerPAK SO-8
= 150_C)
= 150_C)
t
Bottom View
a
a
5
GS
GS
Parameter
Parameter
D
(W)
= 4.5 V
= 10 V
Si7358ADP-T1—E3 (Lead (Pb)-Free)
a
a
1
S
N-Channel 30-V (D-S) MOSFET
2
S
a
I
3
D
23
20
S
(A)
5.15 mm
4
G
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
Q
L = 0.1 mH
T
T
T
T
t v 10 sec
A
A
A
A
g
New Product
30 5
30.5
= 25_C
= 70_C
= 25_C
= 70_C
(Typ)
Symbol
Symbol
T
R
R
R
V
V
J
I
I
P
P
, T
DM
thJC
I
I
I
AS
thJA
DS
GS
D
D
S
D
D
stg
G
FEATURES
D TrenchFETr Power MOSFET
D Optimized for “Low Side” Synchronous
D New Low Thermal Resistance PowerPAKr
D 100% R
APPLICATIONS
D DC/DC Converters
D Synchronous Rectifiers
N-Channel MOSFET
Rectifier Operation
Package with Low 1.07-mm Profile
10 secs
Typical
4.5
5.4
3.4
1.0
23
18
18
50
D
S
g
Tested
ï55 to 150
"20
30
60
50
Steady State
Maximum
Vishay Siliconix
1.6
1.9
1.2
1.5
14
23
65
11
Si7358ADP
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
1

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si7358adp-t1 Summary of contents

Page 1

... S 6. Bottom View Ordering Information: Si7358ADP-T1 Si7358ADP-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction) ...

Page 2

... Si7358ADP Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...

Page 3

... Document Number: 73161 S-41959—Rev. A, 25-Oct-04 New Product 0.020 0.016 0.012 0.008 T = 25_C J 0.004 0.000 0.8 1.0 1.2 Si7358ADP Vishay Siliconix Capacitance 6000 5000 C iss 4000 3000 2000 C oss 1000 C rss ï Drain-to-Source Voltage (V) DS On-Resistance vs ...

Page 4

... Si7358ADP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0 250 mA 0.4 D 0.2 ï0.0 ï0.2 ï0.4 ï0.6 ï0.8 ï50 ï ï Temperature (_C Limited by r DS(on) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 ï4 ï www.vishay.com ...

Page 5

... Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73161 Document Number: 73161 S-41959—Rev. A, 25-Oct-04 New Product ï2 ï Square Wave Pulse Duration (sec) Si7358ADP Vishay Siliconix 1 10 www.vishay.com 5 ...

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