si7344dp-t1 Vishay, si7344dp-t1 Datasheet

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si7344dp-t1

Manufacturer Part Number
si7344dp-t1
Description
N-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Part Number
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Quantity
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Part Number:
si7344dp-t1-E3
Manufacturer:
VISHAY
Quantity:
8 000
Notes
a.
Document Number: 72128
S-03602—Rev. A, 31-Mar-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
20
20
(V)
J
8
ti
6.15 mm
D
Ordering Information: Si7344DP-T1
t A bi
7
D
6
D
PowerPAKt SO-8
J
J
a
a
0.012 @ V
0.008 @ V
= 150_C)
= 150_C)
t
Bottom View
a
a
5
Parameter
Parameter
D
r
DS(on)
a
a
GS
GS
1
S
(W)
= 4.5 V
N-Channel 20-V (D-S) MOSFET
= 10 V
2
S
a
3
S
5.15 mm
4
G
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
T
T
T
T
t v 10 sec
A
A
A
A
I
New Product
= 25_C
= 70_C
= 25_C
= 70_C
D
17
14
(A)
Symbol
Symbol
T
R
R
R
V
V
J
I
P
P
, T
DM
thJC
I
I
I
thJA
DS
GS
D
D
S
D
D
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKt
D PWM Optimized
APPLICATIONS
D DC/DC Conversion
D Synchronous Rectification
stg
Package with Low 1.07-mm Profile
- Desktop
- Server
G
10 secs
Typical
N-Channel MOSFET
3.7
4.1
2.6
4.5
17
14
22
55
-55 to 150
D
S
"20
20
50
Steady State
Maximum
Vishay Siliconix
1.6
1.8
1.1
5.5
30
70
11
9
Si7344DP
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
A
1

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si7344dp-t1 Summary of contents

Page 1

... PowerPAKt SO Bottom View Ordering Information: Si7344DP-T1 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction) ...

Page 2

... Si7344DP Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...

Page 3

... V - Source-to-Drain Voltage (V) SD Document Number: 72128 S-03602—Rev. A, 31-Mar-03 New Product 25_C J 0.8 1.0 1.2 Si7344DP Vishay Siliconix Capacitance 2000 1600 C iss 1200 800 C oss C rss 400 Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...

Page 4

... Si7344DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0 250 mA D -0.0 -0.2 -0.4 -0.6 -0.8 -50 - Temperature (_C) J Limited by r Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 New Product 100 125 150 Safe Operating Area, Junction-to-Case ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Document Number: 72128 S-03602—Rev. A, 31-Mar-03 New Product - Square Wave Pulse Duration (sec) Si7344DP Vishay Siliconix 1 10 www.vishay.com 5 ...

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